公开(公告)号：US20080180209A1

公开(公告)日：2008-07-31

申请号：US11699530

申请日：2007-01-29

申请人： Anthony Yu-Chung Ku ,  Steven Alfred Tysoe ,  Vinayak Tilak ,  Peter Micah Sandvik ,  Sergio Paulo Martins Loureiro ,  James Anthony Ruud ,  Anis Zribi ,  Wei-Cheng Tian

发明人： Anthony Yu-Chung Ku ,  Steven Alfred Tysoe ,  Vinayak Tilak ,  Peter Micah Sandvik ,  Sergio Paulo Martins Loureiro ,  James Anthony Ruud ,  Anis Zribi ,  Wei-Cheng Tian

IPC分类号： G01N27/12 ,  B05D5/12

CPC分类号： G01N27/125

摘要： Gallium oxide films for sensing gas comprise Ga2O3 and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.

摘要翻译： 用于感测气体的氧化镓膜包括Ga 2 O 3 O 3并具有至少约30％的孔隙率。 可以通过用包含镓盐和致孔剂的溶液涂覆基底来形成这种膜，所述成盐剂包含包含亲水链和疏水链的有机化合物; 并将衬底加热至约400℃至约600℃的温度，同时将衬底暴露于含氧源以将镓盐转化为氧化镓。

公开(公告)号：US07547953B2

公开(公告)日：2009-06-16

申请号：US11699530

申请日：2007-01-29

申请人： Anthony Yu-Chung Ku ,  Steven Alfred Tysoe ,  Vinayak Tilak ,  Peter Micah Sandvik ,  Sergio Paulo Martins Loureiro ,  James Anthony Ruud ,  Anis Zribi ,  Wei-Cheng Tian

发明人： Anthony Yu-Chung Ku ,  Steven Alfred Tysoe ,  Vinayak Tilak ,  Peter Micah Sandvik ,  Sergio Paulo Martins Loureiro ,  James Anthony Ruud ,  Anis Zribi ,  Wei-Cheng Tian

IPC分类号： H01L27/14

CPC分类号： G01N27/125

摘要： Gallium oxide films for sensing gas comprise Ga2O3 and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.

摘要翻译： 用于感测气体的氧化镓膜包括Ga 2 O 3并且具有至少约30％的孔隙率。 可以通过用包含镓盐和致孔剂的溶液涂覆基底来形成这种膜，所述成盐剂包含包含亲水链和疏水链的有机化合物; 并将衬底加热至约400℃至约600℃的温度，同时将衬底暴露于含氧源以将镓盐转化为氧化镓。

公开(公告)号：US07181972B2

公开(公告)日：2007-02-27

申请号：US11023202

申请日：2004-12-27

申请人： Samhita Dasgupta ,  Jeffrey Bernard Fortin ,  Steven Francis LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Alfred Tysoe

发明人： Samhita Dasgupta ,  Jeffrey Bernard Fortin ,  Steven Francis LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Alfred Tysoe

IPC分类号： G01L9/00

CPC分类号： G01H9/00 ,  G01L1/142 ,  G01L1/18 ,  G01L9/0052 ,  G01L9/0073 ,  G01L9/0075 ,  G01L9/008 ,  G01L9/08 ,  G01L19/04

摘要： A sensor, in accordance with aspects of the present technique, is provided. The sensor comprises a membrane formed of gallium nitride. The membrane is disposed on a substrate, which is wet-etched to form a closed cavity. The membrane exhibits both a capacitive response and a piezo-response to an external stimulus. The sensor further includes a circuit for measuring at least one of the capacitive response or the piezo-response. In certain aspects, the sensor may be operable to measure external stimuli, such as, pressure, force and mechanical vibration.

摘要翻译： 提供了根据本技术方面的传感器。 传感器包括由氮化镓形成的膜。 膜被布置在衬底上，其被湿蚀刻以形成闭合腔。 膜对外部刺激具有电容响应和压电响应。 传感器还包括用于测量电容响应或压电响应中的至少一个的电路。 在某些方面，传感器可操作以测量外部刺激，例如压力，力和机械振动。

公开(公告)号：US20120171824A1

公开(公告)日：2012-07-05

申请号：US13418566

申请日：2012-03-13

申请人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

发明人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

IPC分类号： H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

摘要： A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.

摘要翻译： 提供了一种制造异质结构器件的方法，其包括将离子注入到多层结构的表面的一部分中。 碘离子注入第一区域和第二区域之间以形成第三区域。 电荷从第三区域中的二维电子气（2DEG）通道中消耗，以形成从第一区域到第二区域的可逆的非导电通路。 在向靠近第三区域的栅电极施加电压电位时，允许电流从第一区域流到第二区域。

公开(公告)号：US20090140293A1

公开(公告)日：2009-06-04

申请号：US11946959

申请日：2007-11-29

申请人： Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Vinayak Tilak ,  Siddharth Rajan ,  Ho-Young Cha

发明人： Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Vinayak Tilak ,  Siddharth Rajan ,  Ho-Young Cha

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003

摘要： A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article.

摘要翻译： 异质结构器件或制品包括载流子传输层，背沟道层和阻挡层。 载流子传输层具有与第一表面相对的第一表面和第二表面。 背沟道层被固定到载流子传输层的第一表面，并且阻挡层固定到载流子传输层的第二表面。 载流子传输层，背沟道层和阻挡层中的每一个包括氮化镓铝合金。 该制品还包括在载流子传输层的第二表面和势垒层的表面的界面处的2D电子气体。 2D电子气体由界面处的带隙差分限定，这允许电子迁移率。 一种系统包括包括该物品的异质结构场效应晶体管。

公开(公告)号：US20080302672A1

公开(公告)日：2008-12-11

申请号：US11758179

申请日：2007-06-05

申请人： Peter Micah Sandvik ,  Radislav Alexandrovich Potyrailo ,  Vinayak Tilak ,  John Patrick Lemmon ,  Elena Babes-Dornea ,  Yves Grincourt ,  Charles-Olivier Fournier

发明人： Peter Micah Sandvik ,  Radislav Alexandrovich Potyrailo ,  Vinayak Tilak ,  John Patrick Lemmon ,  Elena Babes-Dornea ,  Yves Grincourt ,  Charles-Olivier Fournier

IPC分类号： G01N27/26

CPC分类号： G01N33/0034 ,  G01N27/129 ,  G01N27/414 ,  G01N33/2841

摘要： A sensor system for measuring a plurality of chemical species is disclosed. The sensor system includes a plurality of semiconductor device sensor elements, wherein each sensor element includes at least one wide band gap semiconductor layer and at least one catalytic layer configured to have an electrical property modifiable on exposure to an analyte including one or more chemical species; and an acquisition and analysis system configured to receive sensor signals from the plurality of sensor elements and to use multivariate analysis techniques to analyze the sensor signals to provide multivariate analyte measurement data.

摘要翻译： 公开了一种用于测量多种化学物质的传感器系统。 传感器系统包括多个半导体器件传感器元件，其中每个传感器元件包括至少一个宽带隙半导体层和至少一个催化层，其被配置为具有在暴露于包括一种或多种化学物质的分析物的情况下可修改的电性能; 以及被配置为从所述多个传感器元件接收传感器信号并且使用多变量分析技术来分析所述传感器信号以提供多变量分析物测量数据的采集和分析系统。

公开(公告)号：US07053425B2

公开(公告)日：2006-05-30

申请号：US10706767

申请日：2003-11-12

申请人： Peter Micah Sandvik ,  Vinayak Tilak ,  Jesse Tucker ,  Stanton Earl Weaver ,  David Mulford Shaddock ,  Jonathan Lloyd Male ,  John Patrick Lemmon ,  Mark Allen Woodmansee ,  Venkatesan Manivannan ,  Deborah Ann Haitko

发明人： Peter Micah Sandvik ,  Vinayak Tilak ,  Jesse Tucker ,  Stanton Earl Weaver ,  David Mulford Shaddock ,  Jonathan Lloyd Male ,  John Patrick Lemmon ,  Mark Allen Woodmansee ,  Venkatesan Manivannan ,  Deborah Ann Haitko

IPC分类号： H01L31/312 ,  G01N27/12

CPC分类号： G01N27/4141 ,  G01N33/0037 ,  Y02A50/245

摘要： A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

摘要翻译： 一种气体传感器装置，包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆接触层和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅，金刚石，III族氮化物，III族氮化物的合金，氧化锌及其任何组合的材料。

公开(公告)号：US20130105816A1

公开(公告)日：2013-05-02

申请号：US13281638

申请日：2011-10-26

申请人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

发明人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC分类号： H01L29/16 ,  H01L21/56 ,  H01L29/12

CPC分类号： H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

公开(公告)号：US08159002B2

公开(公告)日：2012-04-17

申请号：US11961532

申请日：2007-12-20

申请人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

发明人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

摘要： A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device.

摘要翻译： 异质结构器件包括具有第一区域，第二区域和第三区域的半导体多层结构。 第一区域耦合到源电极，第二区域耦合到漏电极。 第三区域设置在第一区域和第二区域之间。 第三区域提供从源电极到漏电极的可切换导电路径。 第三区域包括碘离子。 一种系统包括包括该器件的异质结构场效应晶体管。

公开(公告)号：US07906427B2

公开(公告)日：2011-03-15

申请号：US12251341

申请日：2008-10-14

申请人： Jody Alan Fronheiser ,  Peter Micah Sandvik ,  Kevin Sean Matocha ,  Vinayak Tilak

发明人： Jody Alan Fronheiser ,  Peter Micah Sandvik ,  Kevin Sean Matocha ,  Vinayak Tilak

IPC分类号： H01L21/4763

CPC分类号： H01L29/66068 ,  H01L22/12 ,  H01L22/26 ,  H01L29/0873 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7813 ,  Y02P80/30

摘要： There is provided a method for dimension profiling of a semiconductor device. The method involves incorporating a feature comprising a detectable element into the device, and thereafter detecting the detectable element to determine a dimension of the feature. This information can be used for the determination of a dimension of buried channels, and also for end-point detection of CMP processes.

摘要翻译： 提供了一种用于半导体器件的尺寸分布的方法。 该方法包括将包括可检测元件的特征结合到该装置中，并且此后检测可检测元件以确定特征的尺寸。 该信息可用于确定掩埋通道的尺寸，也可用于CMP工艺的端点检测。