发明授权
US07550396B2 Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device
有权
用于在半导体器件中的氮化硅层的图案化期间减少抗蚀剂中毒的方法
- 专利标题： Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device
- 专利标题（中）： 用于在半导体器件中的氮化硅层的图案化期间减少抗蚀剂中毒的方法
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申请号： US11742878申请日： 2007-05-01
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公开(公告)号： US07550396B2公开(公告)日： 2009-06-23
- 发明人: Kai Frohberg , Volker Grimm , Sven Mueller , Matthias Lehr , Ralf Richter , Jochen Klais , Martin Mazur , Heike Salz , Joerg Hohage , Matthias Schaller
- 申请人： Kai Frohberg , Volker Grimm , Sven Mueller , Matthias Lehr , Ralf Richter , Jochen Klais , Martin Mazur , Heike Salz , Joerg Hohage , Matthias Schaller
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102006046374 20060929
- 主分类号： H01L21/461
- IPC分类号： H01L21/461
摘要：
By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.
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