发明授权
- 专利标题： High frequency IC package and method for fabricating the same
- 专利标题（中）： 高频IC封装及其制造方法
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申请号： US11400182申请日： 2006-04-10
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公开(公告)号： US07554197B2公开(公告)日： 2009-06-30
- 发明人: Hsiang-Ming Huang , An-Hong Liu , Yeong-Jyh Lin , Yi-Chang Lee , Wu-Chang Tu , Chun-Hung Lin , Shih Feng Chiu
- 申请人： Hsiang-Ming Huang , An-Hong Liu , Yeong-Jyh Lin , Yi-Chang Lee , Wu-Chang Tu , Chun-Hung Lin , Shih Feng Chiu
- 申请人地址： BM Hamilton TW Hsinchu
- 专利权人： ChipMOS Technologies (Bermuda) Ltd,ChipMOS Technologies Inc.
- 当前专利权人： ChipMOS Technologies (Bermuda) Ltd,ChipMOS Technologies Inc.
- 当前专利权人地址： BM Hamilton TW Hsinchu
- 代理机构： Troxell Law Office PLLC
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/28 ; H01L23/29
摘要：
A high frequency IC package mainly includes a substrate, a bumped chip, and a plurality of conductive fillers where the substrate has a plurality of bump holes penetrating from the top surface to the bottom surface. The active surface of the chip is attached to the top surface of the substrate in a manner that the bumps are inserted into the bump holes respectively. The conductive fillers are formed in the bump holes to electrically connect the bumps to the circuit layer of the substrate. The high frequency IC package has a shorter electrical path and a thinner package thickness.
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