Invention Grant
- Patent Title: Ion implanter with etch prevention member(s)
- Patent Title (中): 具有防蚀蚀部件的离子注入机
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Application No.: US11845187Application Date: 2007-08-27
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Publication No.: US07560712B2Publication Date: 2009-07-14
- Inventor: Il-Kyoung Kim , No-Hyun Huh , Tae-Won Lee , Sung-Wook Park , Ki-Young Yun , Won-Soon Lee , Young-Ha Yoon , Tae-Sub Im
- Applicant: Il-Kyoung Kim , No-Hyun Huh , Tae-Won Lee , Sung-Wook Park , Ki-Young Yun , Won-Soon Lee , Young-Ha Yoon , Tae-Sub Im
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0082659 20060830
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/305

Abstract:
An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.
Public/Granted literature
- US20080054194A1 ION IMPLANTER WITH ETCH PREVENTION MEMBER(S) Public/Granted day:2008-03-06
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