公开(公告)号：US07560712B2

公开(公告)日：2009-07-14

申请号：US11845187

申请日：2007-08-27

申请人： Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

发明人： Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

IPC分类号： H01J37/317 ,  H01J37/305

CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

摘要： An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

摘要翻译： 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。

公开(公告)号：US08361274B2

公开(公告)日：2013-01-29

申请号：US11032651

申请日：2005-01-10

申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Il-Kyoung Kim ,  Sung-Wook Park ,  Seung-Ki Chae ,  No-Hyun Huh ,  Jae-Wook Kim ,  Jae-Hyuck An ,  Woo-Seok Kim ,  Myeong-Jin Kim ,  Kyoung-Ho Jang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Il-Kyoung Kim ,  Sung-Wook Park ,  Seung-Ki Chae ,  No-Hyun Huh ,  Jae-Wook Kim ,  Jae-Hyuck An ,  Woo-Seok Kim ,  Myeong-Jin Kim ,  Kyoung-Ho Jang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

IPC分类号： H01L21/3065 ,  C23C16/455 ,  C23C16/00

CPC分类号： H01L21/6708 ,  H01J37/3244 ,  H01L21/3065

摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

摘要翻译： 真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。 第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。 根据该真空处理装置，可以实现多个处理对象的高速处理。 此外，可以确保处理后的加工对象的面内均匀性。

公开(公告)号：US20050150861A1

公开(公告)日：2005-07-14

申请号：US11032651

申请日：2005-01-10

申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Il-Kyoung Kim ,  Sung-Wook Park ,  Seung-Ki Chae ,  No-Hyun Huh ,  Jae-Wook Kim ,  Jae-Hyuck An ,  Woo-Seok Kim ,  Myeong-Jin Kim ,  Kyoung-Ho Jang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Il-Kyoung Kim ,  Sung-Wook Park ,  Seung-Ki Chae ,  No-Hyun Huh ,  Jae-Wook Kim ,  Jae-Hyuck An ,  Woo-Seok Kim ,  Myeong-Jin Kim ,  Kyoung-Ho Jang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

IPC分类号： H01L21/00 ,  H01L21/3065 ,  C23F1/00 ,  B01D53/02 ,  B01D59/26

CPC分类号： H01L21/6708 ,  H01J37/3244 ,  H01L21/3065

摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

摘要翻译： 真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。 第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。 根据该真空处理装置，可以实现多个处理对象的高速处理。 此外，可以确保处理后的加工对象的面内均匀性。

公开(公告)号：US20070181062A1

公开(公告)日：2007-08-09

申请号：US11670596

申请日：2007-02-02

申请人： Il-Kyoung Kim ,  Kwang-Myung Lee ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Ki-Young Yun

发明人： Il-Kyoung Kim ,  Kwang-Myung Lee ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Ki-Young Yun

IPC分类号： F27D15/02 ,  C23C16/00

CPC分类号： F27B17/0025 ,  H01L21/67109 ,  H01L21/67248

摘要： A semiconductor device manufacturing apparatus comprises a chamber for processing a wafer, a wafer loading unit configured to load a wafer into and out of the chamber, a heating unit coupled with a chamber wall and a temperature measuring unit located between the chamber wall and the wafer loading unit and apart from the chamber wall.

摘要翻译： 半导体器件制造设备包括用于处理晶片的腔室，被配置为将晶片加载到腔室中的晶片加载单元，与室壁耦合的加热单元和位于室壁和晶片之间的温度测量单元 装载单元并且与室壁分开。

公开(公告)号：US20060169201A1

公开(公告)日：2006-08-03

申请号：US11346549

申请日：2006-02-01

申请人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Myeong-Jin Kim ,  Seoung-Chang Baek ,  Sung-Wook Park ,  Un-Chan Baek ,  Hyun-Wook Lee ,  Kyoung-Ho Jang ,  Seong-Ju Choi ,  Il-Kyoung Kim

发明人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Myeong-Jin Kim ,  Seoung-Chang Baek ,  Sung-Wook Park ,  Un-Chan Baek ,  Hyun-Wook Lee ,  Kyoung-Ho Jang ,  Seong-Ju Choi ,  Il-Kyoung Kim

IPC分类号： B05B7/00

CPC分类号： C23C16/4486 ,  C23C16/45565 ,  C23C16/45574

摘要： In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is coupled with the atomizer and controlled by a valve controller of the liquid mass flow controller. The on-off valve is opened to form the layer and closed during downtime of a layer formation apparatus to prevent leakage of the remaining liquid reactant in a connecting conduit between the liquid mass flow controller and the on-off valve.

摘要翻译： 在用于在基板上形成层的气体供给装置中，液体反应物通过液体质量流量控制器和开关阀引入雾化器。 将由雾化器形成的气溶胶雾化物引入蒸发器中然后汽化。 开关阀与雾化器耦合并由液体质量流量控制器的阀控制器控制。 开关阀打开以形成层并且在层形成装置的停机期间关闭，以防止液体质量流量控制器和开关阀之间的连接导管中剩余的液体反应物泄漏。