发明授权
- 专利标题： Semiconductor device and fabrication method thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11651617申请日： 2007-01-10
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公开(公告)号： US07560781B2公开(公告)日： 2009-07-14
- 发明人: Toshihisa Gotoh , Kenichi Azuma , Kouichi Takeuchi , Akiyoshi Mutoh
- 申请人： Toshihisa Gotoh , Kenichi Azuma , Kouichi Takeuchi , Akiyoshi Mutoh
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2006-006671 20060113
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.
公开/授权文献
- US20070178638A1 Semiconductor device and fabrication method thereof 公开/授权日：2007-08-02