公开(公告)号：US20100149397A1

公开(公告)日：2010-06-17

申请号：US12591524

申请日：2009-11-23

申请人： Akiyoshi Mutoh

发明人： Akiyoshi Mutoh

IPC分类号： H04N5/335 ,  H01L31/18

CPC分类号： H01L27/14607 ,  H01L27/14612 ,  H01L27/1463

摘要： A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section, the apparatus further includes: a semiconductor substrate including a plurality of diffusion layers formed thereabove, the diffusion layers constituting the photoelectric conversion sections, the charge accumulation section and the charge readout section; a readout gate electrode formed above the semiconductor substrate and constituting the charge readout section; an insulation sidewall formed on a side surface of the readout gate electrode; and a surface diffusion layer constituting the photoelectric conversion sections, which is positioned in a self-aligning manner with respect to the readout gate electrode by the insulation sidewall.

摘要翻译： 根据本发明的固体摄像装置包括：多个光电转换部; 电荷累积部; 和电荷读出部，所述装置还包括：半导体衬底，包括形成在其上的多个扩散层，构成光电转换部的扩散层，电荷累积部和电荷读出部; 读取栅电极，形成在所述半导体衬底上并构成所述电荷读出部; 形成在所述读出栅电极的侧表面上的绝缘侧壁; 以及构成光电转换部的表面扩散层，其通过绝缘侧壁相对于读出用栅电极自对准地配置。

公开(公告)号：US07560781B2

公开(公告)日：2009-07-14

申请号：US11651617

申请日：2007-01-10

申请人： Toshihisa Gotoh ,  Kenichi Azuma ,  Kouichi Takeuchi ,  Akiyoshi Mutoh

发明人： Toshihisa Gotoh ,  Kenichi Azuma ,  Kouichi Takeuchi ,  Akiyoshi Mutoh

IPC分类号： H01L29/76

CPC分类号： H01L21/823878 ,  H01L21/76237 ,  H01L21/823807 ,  H01L29/7846

摘要： A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.

摘要翻译： 半导体器件包括沟槽中的第一绝缘层和第二绝缘层。 第一绝缘层将两个MOSFET彼此绝缘，并且第二绝缘层具有与第一绝缘层的真实应力相反的真实应力。 第二绝缘层包括两个不同真实应力的区域。 这使得能够在采用用于元件隔离的STI方法的半导体器件中独立地控制每个MOSFET中的漏极电流。

公开(公告)号：US08115851B2

公开(公告)日：2012-02-14

申请号：US12591524

申请日：2009-11-23

申请人： Akiyoshi Mutoh

发明人： Akiyoshi Mutoh

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/148 ,  H01L21/00 ,  H01L21/339

CPC分类号： H01L27/14607 ,  H01L27/14612 ,  H01L27/1463

摘要： A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section, the apparatus further includes: a semiconductor substrate including a plurality of diffusion layers formed thereabove, the diffusion layers constituting the photoelectric conversion sections, the charge accumulation section and the charge readout section; a readout gate electrode formed above the semiconductor substrate and constituting the charge readout section; an insulation sidewall formed on a side surface of the readout gate electrode; and a surface diffusion layer constituting the photoelectric conversion sections, which is positioned in a self-aligning manner with respect to the readout gate electrode by the insulation sidewall.

摘要翻译： 根据本发明的固体摄像装置包括：多个光电转换部; 电荷累积部; 和电荷读出部，所述装置还包括：半导体衬底，包括形成在其上的多个扩散层，构成光电转换部的扩散层，电荷累积部和电荷读出部; 读取栅电极，形成在所述半导体衬底上并构成所述电荷读出部; 形成在所述读出栅电极的侧表面上的绝缘侧壁; 以及构成光电转换部的表面扩散层，其通过绝缘侧壁相对于读出用栅电极自对准地配置。

公开(公告)号：US20070178638A1

公开(公告)日：2007-08-02

申请号：US11651617

申请日：2007-01-10

申请人： Toshihisa Gotoh ,  Kenichi Azuma ,  Kouichi Takeuchi ,  Akiyoshi Mutoh

发明人： Toshihisa Gotoh ,  Kenichi Azuma ,  Kouichi Takeuchi ,  Akiyoshi Mutoh

IPC分类号： H01L21/8238 ,  H01L21/76

CPC分类号： H01L21/823878 ,  H01L21/76237 ,  H01L21/823807 ,  H01L29/7846

摘要： A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.

摘要翻译： 半导体器件包括沟槽中的第一绝缘层和第二绝缘层。 第一绝缘层将两个MOSFET彼此绝缘，并且第二绝缘层具有与第一绝缘层的真实应力相反的真实应力。 第二绝缘层包括两个不同真实应力的区域。 这使得能够在采用用于元件隔离的STI方法的半导体器件中独立地控制每个MOSFET中的漏极电流。

公开(公告)号：US20090050997A1

公开(公告)日：2009-02-26

申请号：US12222100

申请日：2008-08-01

申请人： Akiyoshi Mutoh

发明人： Akiyoshi Mutoh

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14806

摘要： A solid-state image capturing device having a plurality of light receiving sections for performing photoelectrical conversion on and capturing image light from a subject is provided. In the light receiving sections, a low concentration opposite conductivity layer is provided either on a single conductivity substrate or a single conductivity layer, a high concentration opposite conductivity layer having a higher impurity concentration than the low concentration opposite conductivity layer is provided on the low concentration opposite conductivity layer, and a photodiode is constituted by a PN junction of the single conductivity substrate or the single conductivity layer and the low concentration opposite conductivity layer.

摘要翻译： 提供了一种固态图像捕获装置，其具有用于对来自被摄体的图像光进行光电转换和捕获图像光的多个光接收部分。 在光接收部中，在单个导电性基板或单电导率层上设置低浓度相反电导率层，在低浓度下设置具有比低浓度相反电导率层高的杂质浓度的高浓度相反电导率层 相反的导电层，并且光电二极管由单一导电基底或单电导层的PN结和低浓度相反电导率层构成。