发明授权
- 专利标题: Integrated assist features for epitaxial growth bulk tiles with compensation
- 专利标题(中): 具有补偿的外延生长块体的综合辅助功能
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申请号: US11650254申请日: 2007-01-04
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公开(公告)号: US07565639B2公开(公告)日: 2009-07-21
- 发明人: Omar Zia , Nigel Cave , Venkat Kolagunta , Ruiqi Tian , Edward O. Travis
- 申请人: Omar Zia , Nigel Cave , Venkat Kolagunta , Ruiqi Tian , Edward O. Travis
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Fortkort & Houston P.C.
- 代理商 John A. Fortkort
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and a first epitaxial growth mask set (309) from the first data set, wherein the first epitaxial growth mask set is derived from the first data set by removing a subset (305) of the tiles defined by the first data set and incorporating the subset of tiles into the first epitaxial growth mask set; and (c) reconfiguring the first trench CMP mask set to account for the first epitaxial growth mask set, thereby defining a second trench CMP mask set (308).