Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same

Invention Grant

US07566608B2 Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same 有权

Title translation: 形成包括氧化铪锆的薄层的方法和形成栅极结构的方法，电容器和使用其的闪存器件

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Patent Title: Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same
Patent Title (中): 形成包括氧化铪锆的薄层的方法和形成栅极结构的方法，电容器和使用其的闪存器件
Application No.: US11285555

Application Date: 2005-11-22
Publication No.: US07566608B2

Publication Date: 2009-07-28
Inventor: Dae-Sik Choi , Kyoung-Ryul Yoon , Han-Mei Choi , Ki-Yeon Park , Seung-Hwan Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo
Applicant: Dae-Sik Choi , Kyoung-Ryul Yoon , Han-Mei Choi , Ki-Yeon Park , Seung-Hwan Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, PA
Priority: KR10-2004-0096065 20041123
Main IPC: H01L21/8238
IPC: H01L21/8238

Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same

Abstract:

Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.

Abstract(Chinese):

通过供应四（乙基甲基氨基）锆（[Zr（N（C 2 H 5）（CH 3）} 4]，TEMAZ）和四（乙基甲基氨基）铪（[Hf（N（C 2 H 5））的方式在半导体衬底上形成氧化锆铪薄膜）（CH 3）} 4]，TEMAH）。 TEMAZ和TEMAH可与氧化剂反应。包括氧化铪的薄层可以用于栅极结构中的栅极绝缘层，电容器中的电介质层或闪存器件中的介电层。

Public/Granted literature

US20060141695A1 Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same Public/Granted day:2006-06-29

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS