发明授权
US07570513B2 Non-volatile memory and method with power-saving read and program-verify operations
有权
具有省电读取和程序验证操作的非易失性存储器和方法
- 专利标题: Non-volatile memory and method with power-saving read and program-verify operations
- 专利标题(中): 具有省电读取和程序验证操作的非易失性存储器和方法
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申请号: US11534307申请日: 2006-09-22
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公开(公告)号: US07570513B2公开(公告)日: 2009-08-04
- 发明人: Yan Li , Seungpil Lee , Siu Lung Chan
- 申请人: Yan Li , Seungpil Lee , Siu Lung Chan
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has features to reduce power consumption during read, and program/verify operations. A read or program verify operation includes one or more sensing cycles relative to one or more demarcation threshold voltages to determine a memory state. In one aspect, selective memory cells among the group being sensed in parallel have their conduction currents turned off when they are determined to be in a state not relevant to the current sensing cycle. In another aspect, a power-consuming period is minimized by preemptively starting any operations that would prolong the period. In a program/verify operation cells not to be programmed have their bit lines charged up in the program phase. Power is saved when a set of these bit lines avoids re-charging at every passing of a program phase.