发明授权
- 专利标题: Crystallization apparatus and crystallization method
- 专利标题(中): 结晶装置和结晶方法
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申请号: US10958396申请日: 2004-10-06
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公开(公告)号: US07572335B2公开(公告)日: 2009-08-11
- 发明人: Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人: Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人地址: JP Yokohama-shi
- 专利权人: Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人: Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人地址: JP Yokohama-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-202009 20020711
- 主分类号: C30B35/00
- IPC分类号: C30B35/00
摘要:
A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.
公开/授权文献
- US20050048383A1 Crystallization apparatus and crystallization method 公开/授权日:2005-03-03
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