发明授权
- 专利标题： Transistor type ferroelectric memory and method of manufacturing the same
- 专利标题（中）： 晶体管型铁电存储器及其制造方法
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申请号： US11633682申请日： 2006-12-04
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公开(公告)号： US07573083B2公开(公告)日： 2009-08-11
- 发明人: Takeshi Kijima , Akio Konishi
- 申请人： Takeshi Kijima , Akio Konishi
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2005-350556 20051205
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source electrode formed above the ferroelectric layer; a drain electrode formed above the ferroelectric layer and apart from the source electrode; and a channel layer formed above the ferroelectric layer and between the source electrode and the drain electrode.
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