发明授权
- 专利标题: Formation of oxidation-resistant seed layer for interconnect applications
- 专利标题(中): 形成用于互连应用的抗氧化种子层
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申请号: US11839260申请日: 2007-08-15
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公开(公告)号: US07585765B2公开(公告)日: 2009-09-08
- 发明人: Chih-Chao Yang , Nancy R. Klymko , Christopher C. Parks , Keith Kwong Hon Wong
- 申请人: Chih-Chao Yang , Nancy R. Klymko , Christopher C. Parks , Keith Kwong Hon Wong
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Lisa Latkitsch Esq.
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.