利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

253 条记录 (耗时 0.034 秒)

    Use of gas cluster ion beam to reduce metal void formation in interconnect structures
    3.
    发明授权
    Use of gas cluster ion beam to reduce metal void formation in interconnect structures 有权
    使用气体簇离子束来减少互连结构中的金属空隙形成

    公开(公告)号：US08815734B2

    公开(公告)日：2014-08-26

    申请号：US13290577

    申请日：2011-11-07

    申请人： Kangguo Cheng ,  Junli Wang ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    发明人： Kangguo Cheng ,  Junli Wang ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76804 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76865 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A gas cluster ion beam process is used to reduce and/or even eliminate metal void formation in an interconnect structure. In one embodiment, gas cluster ion beam etching forms a chamfer opening in an interconnect dielectric material. In another embodiment, gas cluster ion beam etching reduces the overhang profile of a diffusion barrier or a multilayered stack of a diffusion barrier and a plating seed layer that is formed within an opening located in an interconnect dielectric material. In yet another embodiment, a gas cluster ion beam process deactivates a surface of an interconnect dielectric material that is located at upper corners of an opening that is formed therein. In this embodiment, the gas cluster ion beam process deposits a material that deactivates the upper corners of each opening that is formed into an interconnect dielectric material.

    摘要翻译： 使用气体簇离子束工艺来减少和/或甚至消除互连结构中的金属空隙形成。 在一个实施例中，气体簇离子束蚀刻在互连电介质材料中形成倒角开口。 在另一个实施方案中，气体簇离子束蚀刻减少扩散阻挡层或扩散阻挡层的多层堆叠和形成在位于互连电介质材料中的开口内的电镀种子层的悬垂分布。 在另一个实施例中，气体团簇离子束过程使位于其中形成的开口的上角的互连电介质材料的表面失活。 在该实施例中，气体簇离子束处理沉积了使形成为互连电介质材料的每个开口的上角失活的材料。

    Structure and methods of forming contact structures
    4.
    发明授权
    Structure and methods of forming contact structures 有权
    形成接触结构的结构和方法

    公开(公告)号：US08421228B2

    公开(公告)日：2013-04-16

    申请号：US13405443

    申请日：2012-02-27

    申请人： Ying Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    发明人： Ying Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A contact structure and a method of forming the contact structure. The structure includes: a silicide layer on and in direct physical contact with a top substrate surface of a substrate; an electrically insulating layer on the substrate; and an aluminum plug within the insulating layer. The aluminum plug has a thickness not exceeding 25 nanometers in a direction perpendicular to the top substrate surface. The aluminum plug extends from a top surface of the silicide layer to a top surface of the insulating layer. The aluminum plug is in direct physical contact with the top surface of the silicide layer and is in direct physical contact with the silicide layer. The method includes: forming the silicide layer on and in direct physical contact with the top substrate surface of the substrate; forming the electrically insulating layer on the substrate; and forming the aluminum plug within the insulating layer.

    摘要翻译： 接触结构和形成接触结构的方法。 该结构包括：与衬底的顶部衬底表面直接物理接触的硅化物层; 基板上的电绝缘层; 和绝缘层内的铝塞。 该铝塞的垂直于顶部基板表面的方向的厚度不超过25纳米。 铝塞从硅化物层的顶表面延伸到绝缘层的顶表面。 铝插塞与硅化物层的顶表面直接物理接触并与硅化物层直接物理接触。 该方法包括：在衬底的顶部衬底表面上直接物理接触形成硅化物层; 在基板上形成电绝缘层; 以及在所述绝缘层内形成所述铝塞。

    Structure and methods of forming contact structures
    5.
    发明授权
    Structure and methods of forming contact structures 有权
    形成接触结构的结构和方法

    公开(公告)号：US08183145B2

    公开(公告)日：2012-05-22

    申请号：US11870551

    申请日：2007-10-11

    申请人： Ying Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    发明人： Ying Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and a structure. A method of forming contact structure includes depositing a silicide layer onto a substrate; depositing an electrically insulating layer over a first surface of the silicide layer; forming a via through the insulating layer extending to the first surface; depositing an electrically conductive layer covering a bottom and at least one vertical wall of the via; removing the conductive layer from the bottom; and filling the via with aluminum directly contacting the silicide layer. A structure includes: a silicide layer disposed on a substrate; an electrically insulating layer disposed over the silicide layer; an aluminum plug extending through the insulating layer and directly contacting the silicide layer; and an electrically conductive layer disposed between the plug and the insulating layer. Also included is a method where an aluminum layer grows selectively from a silicide layer and at least one sidewall of a trench.

    摘要翻译： 方法和结构。 形成接触结构的方法包括将硅化物层沉积到基底上; 在所述硅化物层的第一表面上沉积电绝缘层; 通过延伸到第一表面的绝缘层形成通孔; 沉积覆盖所述通孔的底部和至少一个垂直壁的导电层; 从底部去除导电层; 并且用直接与硅化物层接触的铝填充该通孔。 一种结构包括：设置在基板上的硅化物层; 设置在所述硅化物层上的电绝缘层; 延伸穿过绝缘层并直接接触硅化物层的铝塞; 以及设置在插塞和绝缘层之间的导电层。 还包括其中铝层从硅化物层和沟槽的至少一个侧壁选择性地生长的方法。

    HIGH ASPECT RATIO ELECTROPLATED METAL FEATURE AND METHOD
    6.
    发明申请
    HIGH ASPECT RATIO ELECTROPLATED METAL FEATURE AND METHOD 有权
    高比例电镀金属特征及方法

    公开(公告)号：US20100143649A1

    公开(公告)日：2010-06-10

    申请号：US12706108

    申请日：2010-02-16

    申请人： Daniel C. Edelstein ,  Keith Kwong Hon Wong ,  Chih-Chao Yang ,  Haining S. Yang

    发明人： Daniel C. Edelstein ,  Keith Kwong Hon Wong ,  Chih-Chao Yang ,  Haining S. Yang

    IPC分类号： B32B3/10

    CPC分类号： C25D5/02 ,  Y10T428/24331 ,  Y10T428/24917

    摘要： Disclosed are embodiments of an improved high aspect ratio electroplated metal structure (e.g., a copper or copper alloy interconnect, such as a back end of the line (BEOL) or middle of the line (MOL) contact) in which the electroplated metal fill material is free from seams and/or voids. Also, disclosed are embodiments of a method of forming such an electroplated metal structure by lining a high aspect ratio opening (e.g., a high aspect ratio via or trench) with a metal-plating seed layer and, then, forming a protective layer over the portion of the metal-plating seed layer adjacent to the opening sidewalls so that subsequent electroplating occurs only from the bottom surface of the opening up.

    摘要翻译： 公开了改进的高宽比电镀金属结构（例如，铜或铜合金互连，例如线的后端（BEOL）或线的中间（MOL）接触）的实施例，其中电镀金属填充材料 没有接缝和/或空隙。 此外，公开了通过用金属电镀种子层衬里高纵横比开口（例如，高纵横比通孔或沟槽）形成这种电镀金属结构的方法的实施例，然后在其上形成保护层 金属电镀种子层的一部分与开口侧壁相邻，使得随后的电镀仅从开口的底表面发生。

    STRUCTURE AND METHODS OF FORMING CONTACT STRUCTURES
    8.
    发明申请
    STRUCTURE AND METHODS OF FORMING CONTACT STRUCTURES 有权
    形成接触结构的结构和方法

    公开(公告)号：US20090096108A1

    公开(公告)日：2009-04-16

    申请号：US11870551

    申请日：2007-10-11

    申请人： Ying Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    发明人： Ying Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01L23/48 ,  H01L21/44

    CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and a structure. A method of forming contact structure includes depositing a silicide layer onto a substrate; depositing an electrically insulating layer over a first surface of the silicide layer; forming a via through the insulating layer extending to the first surface; depositing an electrically conductive layer covering a bottom and at least one vertical wall of the via; removing the conductive layer from the bottom; and filling the via with aluminum directly contacting the silicide layer. A structure includes: a silicide layer disposed on a substrate; an electrically insulating layer disposed over the silicide layer; an aluminum plug extending through the insulating layer and directly contacting the silicide layer; and an electrically conductive layer disposed between the plug and the insulating layer. Also included is a method where an aluminum layer grows selectively from a silicide layer and at least one sidewall of a trench.

    摘要翻译： 方法和结构。 形成接触结构的方法包括将硅化物层沉积到基底上; 在所述硅化物层的第一表面上沉积电绝缘层; 通过延伸到第一表面的绝缘层形成通孔; 沉积覆盖所述通孔的底部和至少一个垂直壁的导电层; 从底部去除导电层; 并且用直接与硅化物层接触的铝填充该通孔。 一种结构包括：设置在基板上的硅化物层; 设置在所述硅化物层上的电绝缘层; 延伸穿过绝缘层并直接接触硅化物层的铝塞; 以及设置在插塞和绝缘层之间的导电层。 还包括其中铝层从硅化物层和沟槽的至少一个侧壁选择性地生长的方法。