发明授权
US07588674B2 Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures 有权
在结构的电化学制造期间保持层的平行度和/或实现所需厚度的层的方法和装置

  • 专利标题: Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures
  • 专利标题(中): 在结构的电化学制造期间保持层的平行度和/或实现所需厚度的层的方法和装置
  • 申请号: US11028944
    申请日: 2005-01-03
  • 公开(公告)号: US07588674B2
    公开(公告)日: 2009-09-15
  • 发明人: Uri FrodisAdam L. CohenMichael S. Lockard
  • 申请人: Uri FrodisAdam L. CohenMichael S. Lockard
  • 申请人地址: US CA Van Nuys
  • 专利权人: Microfabrica Inc.
  • 当前专利权人: Microfabrica Inc.
  • 当前专利权人地址: US CA Van Nuys
  • 代理商 Dennis R. Smalley
  • 主分类号: C25D5/52
  • IPC分类号: C25D5/52
Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures
摘要:
Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.
信息查询
0/0