发明授权
US07595523B2 Gate pullback at ends of high-voltage vertical transistor structure
失效
高压垂直晶体管结构末端的栅极回流
- 专利标题: Gate pullback at ends of high-voltage vertical transistor structure
- 专利标题(中): 高压垂直晶体管结构末端的栅极回流
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申请号: US11707820申请日: 2007-02-16
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公开(公告)号: US07595523B2公开(公告)日: 2009-09-29
- 发明人: Vijay Parthasarathy , Martin H. Manley
- 申请人: Vijay Parthasarathy , Martin H. Manley
- 申请人地址: US CA San Jose
- 专利权人: Power Integrations, Inc.
- 当前专利权人: Power Integrations, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: The Law Offices of Bradley J. Bereznak
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
In one embodiment, a transistor includes a pillar of semiconductor material arranged in a racetrack-shaped layout having a substantially linear section that extends in a first lateral direction and rounded sections at each end of the substantially linear section. First and second dielectric regions are disposed on opposite sides of the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. First and second gate members respectively disposed in the first and second dielectric regions are separated from the pillar by a gate oxide having a first thickness in the substantially linear section. The gate oxide being substantially thicker at the rounded sections. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.