Controller IC with zero-crossing detector and capacitor discharge switching element
    4.
    发明授权
    Controller IC with zero-crossing detector and capacitor discharge switching element 有权
    控制器IC具有过零检测器和电容放电开关元件

    公开(公告)号:US09455621B2

    公开(公告)日:2016-09-27

    申请号:US14012579

    申请日:2013-08-28

    发明人: Leif Lund David Kung

    摘要: An integrated circuit (IC) for controlling the discharge of a capacitor coupled across first and second input terminals of a power converter circuit, wherein the first and second terminals for receiving an ac line voltage. The IC includes a switching element coupled across the first and second input terminals and a detector circuit. The detector circuit including first and second comparators that produce first and second output signals responsive to a zero-crossing event of the ac line voltage. The first and second output signals being used to generate a reset signal coupled to a timer circuit responsive to the zero-crossing event. When the reset signal is not received within a delay time period, the timer circuit outputs a discharge signal that turns the switching element on, thereby discharging the capacitor.

    摘要翻译: 一种用于控制耦合在功率转换器电路的第一和第二输入端上的电容器的放电的集成电路(IC),其中所述第一和第二端子用于接收交流线路电压。 IC包括耦合在第一和第二输入端上的开关元件和检测器电路。 检测器电路包括响应于交流线路电压的过零事件而产生第一和第二输出信号的第一和第二比较器。 第一和第二输出信号被用于响应于过零事件产生耦合到定时器电路的复位信号。 当在延迟时间段内没有接收到复位信号时,定时器电路输出使开关元件导通的放电信号,从而使电容器放电。

    Monolithic AC/DC converter for generating DC supply voltage
    5.
    发明授权
    Monolithic AC/DC converter for generating DC supply voltage 有权
    用于产生直流电源电压的单片AC / DC转换器

    公开(公告)号:US09401660B2

    公开(公告)日:2016-07-26

    申请号:US14157786

    申请日:2014-01-17

    IPC分类号: H02M7/219 H02M7/217

    摘要: An integrated circuit (IC) comprises a rectifier/regulator circuit coupled to receive an ac source voltage and output a regulated dc voltage. The rectifier/regulator circuit includes first and second switching elements that provide charging current when enabled. The first and second switching elements do not provide charging current when disabled. A sensor circuit is coupled to sense the regulated dc voltage and generate a feedback control signal coupled to the rectifier/regulator circuit that enables the first and second switching elements when the regulated do voltage is above a target voltage, and disables the first and second switching elements when the regulated do voltage is below the target voltage.

    摘要翻译: 集成电路(IC)包括整流器/调节器电路,其耦合以接收交流电源电压并输出调节的直流电压。 整流器/调节器电路包括当使能时提供充电电流的第一和第二开关元件。 禁用时,第一和第二开关元件不提供充电电流。 传感器电路被耦合以感测调节的直流电压并且产生耦合到整流器/调节器电路的反馈控制信号,当调节的电压高于目标电压时,能够使第一和第二开关元件,并且禁用第一和第二开关 当调节的电压低于目标电压时,元件。

    Power supply circuit with a control terminal for different functional modes of operation
    6.
    发明授权
    Power supply circuit with a control terminal for different functional modes of operation 有权
    电源电路具有不同功能操作模式的控制端子

    公开(公告)号:US09253832B2

    公开(公告)日:2016-02-02

    申请号:US14151423

    申请日:2014-01-09

    IPC分类号: H02M3/335 H05B33/08 H02M3/156

    摘要: A method of operation for flyback power converter includes operating a controller of the flyback power converter in a regulation mode when a control signal is below a first threshold. The control signal is provided as an input to a terminal of the flyback power converter. When the control signal is below a second threshold and above the first threshold, the controller is operated in a limiting mode. The controller is operated in an external command mode when the control signal is below a third threshold and above the second threshold. Lastly, when the control signal is above the third threshold, the controller is operated in a protection mode.

    摘要翻译: 用于反激式功率转换器的操作方法包括当控制信号低于第一阈值时,以调节模式操作回扫功率转换器的控制器。 该控制信号被提供给反激式功率转换器的端子作为输入。 当控制信号低于第二阈值并高于第一阈值时,控制器在限制模式下操作。 当控制信号低于第三阈值并高于第二阈值时,控制器以外部命令模式操作。 最后,当控制信号高于第三阈值时,控制器工作在保护模式。

    High-voltage monolithic schottky device structure
    10.
    发明授权
    High-voltage monolithic schottky device structure 有权
    高压单片肖特基器件结构

    公开(公告)号:US08653600B2

    公开(公告)日:2014-02-18

    申请号:US13487025

    申请日:2012-06-01

    IPC分类号: H01L29/66

    摘要: A semiconductor device includes a pillar formed on a substrate of the same conductivity type. The pillar has a vertical thickness that extends from a top surface down to the substrate. The pillar extends in first and second lateral directions in a loop shape. First and second dielectric regions are disposed on opposite lateral sides of the pillar, respectively. First and second conductive field plates are respectively disposed in the first and second dielectric regions. A metal layer is disposed on the top surface of the pillar, the metal layer forming a Schottky diode with respect to the pillar. When the substrate is raised to a high-voltage potential with respect to both the metal layer and the first and second field plates, the first and second field plates functioning capacitively to deplete the pillar of charge, thereby supporting the high-voltage potential along the vertical thickness of the pillar.

    摘要翻译: 半导体器件包括形成在相同导电类型的衬底上的柱。 该柱具有从顶部表面向下延伸到基底的垂直厚度。 支柱以第一和第二横向方向呈环形延伸。 第一和第二电介质区域分别设置在柱的相对侧面上。 第一和第二导电场板分别设置在第一和第二电介质区域中。 金属层设置在柱的顶表面上,金属层相对于柱形成肖特基二极管。 当基板相对于金属层和第一和第二场板两者升高到高压电位时,第一和第二场板电容地起作用以耗尽柱的电荷,从而支持沿着 柱的垂直厚度。