发明授权
- 专利标题： Semiconductor flash device
- 专利标题（中）： 半导体闪存器件
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申请号： US11111282申请日： 2005-04-20
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公开(公告)号： US07602006B2公开(公告)日： 2009-10-13
- 发明人: Chien-Chao Huang , Chi Min-Hwa , Fu-Liang Yang
- 申请人： Chien-Chao Huang , Chi Min-Hwa , Fu-Liang Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A flash memory device includes a floating gate made of a multi-layered structure. The floating gate includes a hetero-pn junction which serves as a quantum well to store charge in the floating gate, thus increasing the efficiency of the device, allowing the device to be operable using lower voltages and increasing the miniaturization of the device. The floating gate may be used in n-type and p-type devices, including n-type and p-type fin-FET devices. The stored charge may be electrons or holes.
公开/授权文献
- US20060237770A1 Semiconductor flash device 公开/授权日：2006-10-26
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