公开(公告)号：US07602006B2

公开(公告)日：2009-10-13

申请号：US11111282

申请日：2005-04-20

申请人： Chien-Chao Huang ,  Chi Min-Hwa ,  Fu-Liang Yang

发明人： Chien-Chao Huang ,  Chi Min-Hwa ,  Fu-Liang Yang

IPC分类号： H01L29/94

CPC分类号： H01L29/7881 ,  H01L29/42324

摘要： A flash memory device includes a floating gate made of a multi-layered structure. The floating gate includes a hetero-pn junction which serves as a quantum well to store charge in the floating gate, thus increasing the efficiency of the device, allowing the device to be operable using lower voltages and increasing the miniaturization of the device. The floating gate may be used in n-type and p-type devices, including n-type and p-type fin-FET devices. The stored charge may be electrons or holes.

摘要翻译： 闪存器件包括由多层结构制成的浮动栅极。 浮置栅极包括用作在浮动栅极中存储电荷的量子阱的异质pn结，从而提高器件的效率，允许器件使用更低的电压可操作并且增加器件的小型化。 浮栅可用于n型和p型器件，包括n型和p型鳍式FET器件。 存储的电荷可以是电子或空穴。

公开(公告)号：US20060237770A1

公开(公告)日：2006-10-26

申请号：US11111282

申请日：2005-04-20

申请人： Chien-Chao Huang ,  Chi Min-Hwa ,  Fu-Liang Yang

发明人： Chien-Chao Huang ,  Chi Min-Hwa ,  Fu-Liang Yang

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L29/42324

摘要： A flash memory device includes a floating gate made of a multi-layered structure. The floating gate includes a hetero-pn junction which serves as a quantum well to store charge in the floating gate, thus increasing the efficiency of the device, allowing the device to be operable using lower voltages and increasing the miniaturization of the device. The floating gate may be used in n-type and p-type devices, including n-type and p-type fin-FET devices. The stored charge may be electrons or holes.

公开(公告)号：US08860155B2

公开(公告)日：2014-10-14

申请号：US13427116

申请日：2012-03-22

申请人： Chi Min-Hwa ,  Mieno Fumitake

发明人： Chi Min-Hwa ,  Mieno Fumitake

IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.

摘要翻译： 本发明涉及磁隧道结（MTJ）装置及其制造方法。 通过通过镶嵌工艺形成MTJ，可以避免由蚀刻工艺造成的装置损坏。 在一些实施例中，在MTJ的第一部分和第二部分之间形成间隔物，以防止MTJ的隧道绝缘层在随后的工艺中受损，从而大大提高了产品的产量。 在其他实施例中，可以改善信号质量，并且可以通过本发明的改进的杯形MTJ结构来减小磁通泄漏。

公开(公告)号：US20130099336A1

公开(公告)日：2013-04-25

申请号：US13427116

申请日：2012-03-22

申请人： Chi Min-Hwa ,  Mieno Fumitake

发明人： Chi Min-Hwa ,  Mieno Fumitake

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.

摘要翻译： 本发明涉及磁隧道结（MTJ）装置及其制造方法。 通过通过镶嵌工艺形成MTJ，可以避免由蚀刻工艺造成的装置损坏。 在一些实施例中，在MTJ的第一部分和第二部分之间形成间隔物，以防止MTJ的隧道绝缘层在随后的工艺中受损，从而大大提高了产品的产量。 在其他实施例中，可以改善信号质量，并且可以通过本发明的改进的杯形MTJ结构来减小磁通泄漏。