发明授权
US07605017B2 Method of manufacturing a semiconductor device and products made thereby
有权
制造半导体器件的方法和由此制成的产品
- 专利标题: Method of manufacturing a semiconductor device and products made thereby
- 专利标题(中): 制造半导体器件的方法和由此制成的产品
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申请号: US11870561申请日: 2007-10-11
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公开(公告)号: US07605017B2公开(公告)日: 2009-10-20
- 发明人: Tetsuya Hayashi , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
- 申请人: Tetsuya Hayashi , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
- 申请人地址: JP Yokohama-shi, Kanagawa
- 专利权人: Nissan Motor Co., Ltd.
- 当前专利权人: Nissan Motor Co., Ltd.
- 当前专利权人地址: JP Yokohama-shi, Kanagawa
- 代理机构: Young Basile
- 优先权: JP2006-316807 20061124
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/338 ; H01L21/337 ; H01L21/8249
摘要:
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance and contacting the semiconductor substrate and the gate insulation layer, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate. A mask layer is formed on the hetero semiconductor region, and the electric field alleviation region and the heterojunction driving end are formed by using at least a portion of the first mask layer.