Invention Grant
US07619731B2 Measuring a damaged structure formed on a wafer using optical metrology
有权
使用光学测量法测量在晶片上形成的损坏结构
- Patent Title: Measuring a damaged structure formed on a wafer using optical metrology
- Patent Title (中): 使用光学测量法测量在晶片上形成的损坏结构
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Application No.: US11396210Application Date: 2006-03-30
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Publication No.: US07619731B2Publication Date: 2009-11-17
- Inventor: Kevin Lally , Merritt Funk , Radha Sundararajan
- Applicant: Kevin Lally , Merritt Funk , Radha Sundararajan
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Main IPC: G01N21/00
- IPC: G01N21/00
Abstract:
A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.
Public/Granted literature
- US20070229806A1 Measuring a damaged structure formed on a wafer using optical metrology Public/Granted day:2007-10-04
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