发明授权
- 专利标题： Semiconductor device having a trench gate and method of fabricating the same
- 专利标题（中）： 具有沟槽栅的半导体器件及其制造方法
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申请号： US12021969申请日： 2008-01-29
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公开(公告)号： US07622770B2公开(公告)日： 2009-11-24
- 发明人: Jeng-Ping Lin , Pei-Ing Lee
- 申请人： Jeng-Ping Lin , Pei-Ing Lee
- 申请人地址： TW Kueishan, Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Kueishan, Taoyuan
- 代理商 Winston Hsu
- 优先权： TW94145039A 20051219
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/76
摘要：
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
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