发明授权
- 专利标题： Semiconductor devices having antireflective material
- 专利标题（中）： 具有抗反射材料的半导体器件
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申请号： US11218045申请日： 2005-08-31
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公开(公告)号： US07626238B2公开(公告)日： 2009-12-01
- 发明人: Richard Holscher , Zhiping Yin , Tom Glass
- 申请人： Richard Holscher , Zhiping Yin , Tom Glass
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232
摘要：
In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.
公开/授权文献
- US20060038262A1 Semiconductor processing methods 公开/授权日：2006-02-23
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