公开(公告)号：US07804115B2

公开(公告)日：2010-09-28

申请号：US11482244

申请日：2006-07-07

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L31/062 ,  C09K19/00

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10T428/1086

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US07626238B2

公开(公告)日：2009-12-01

申请号：US11218045

申请日：2005-08-31

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L31/0232

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US20060269699A1

公开(公告)日：2006-11-30

申请号：US11482244

申请日：2006-07-07

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： C09K19/00

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10T428/1086

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US06878507B2

公开(公告)日：2005-04-12

申请号：US09885393

申请日：2001-06-19

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： G03F7/09 ,  G03F7/26

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US07825443B2

公开(公告)日：2010-11-02

申请号：US11214998

申请日：2005-08-29

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L31/062 ,  C09K19/00

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US20070238207A1

公开(公告)日：2007-10-11

申请号：US11220458

申请日：2005-09-06

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L21/00

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US20060220186A1

公开(公告)日：2006-10-05

申请号：US11214998

申请日：2005-08-29

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L23/58 ,  H01L31/0232

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

公开(公告)号：US20060038262A1

公开(公告)日：2006-02-23

申请号：US11218045

申请日：2005-08-31

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L23/58

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

公开(公告)号：US20050020055A1

公开(公告)日：2005-01-27

申请号：US10917820

申请日：2004-08-13

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： G03F7/09 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/44 ,  H01L21/461

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

公开(公告)号：US06274292B1

公开(公告)日：2001-08-14

申请号：US09030618

申请日：1998-02-25

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： G03F700

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.