发明授权
US07632354B2 Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
有权
具有改进的工艺气体流量的热处理系统和将工艺气体注入热处理系统的方法
- 专利标题： Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
- 专利标题（中）： 具有改进的工艺气体流量的热处理系统和将工艺气体注入热处理系统的方法
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申请号： US11463180申请日： 2006-08-08
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公开(公告)号： US07632354B2公开(公告)日： 2009-12-15
- 发明人: Anthony Dip , Shinji Asari , Meenakshisundaram Gandhi
- 申请人： Anthony Dip , Shinji Asari , Meenakshisundaram Gandhi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Wood, Herron & Evans LLP
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; H01L21/302
摘要：
A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.