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1.发明申请CATALYST-ASSISTED ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS WITH INTEGRATED IN-SITU REACTIVE TREATMENT 有权催化辅助原子层沉积含硅复合膜与一体化现场反应处理公开(公告)号：US20080241358A1
公开(公告)日：2008-10-02
申请号：US11693891
申请日：2007-03-30
IPC分类号： B05D5/12
CPC分类号： C23C16/45534 , C23C16/345 , C23C16/402 , C23C16/45536
摘要： A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2 and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2 catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2 catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.
摘要翻译： 提供了一种用于低温催化剂辅助原子层沉积诸如SiO 2和SiN的含硅膜的方法。 该方法包括将含有XH官能团的基底表面暴露于第一R 1 -XR 2 N 2催化剂和含有硅和氯的气体以形成X /硅/氯络合物 并且通过将衬底表面上的X /硅/氯络合物暴露于第二R 1 -XR 2 2上而形成用XH官能团封端的硅-X层， SUB>催化剂和XH官能团前体。 该方法还包括一种或多种集成的原位反应处理，其减少或消除对不期望的高温后沉积处理的需要。 一种反应处理包括氢化未反应的X-H官能团并从基底表面除去碳和氯杂质。 另一种反应性处理使具有另外的X-H官能团的硅-X层饱和。
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公开(公告)号：US08012859B1
公开(公告)日：2011-09-06
申请号：US12751774
申请日：2010-03-31
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C16/0227 , C23C16/24 , C23C16/45527 , C23C16/45546 , H01L21/0237 , H01L21/02573 , H01L21/0262
摘要： A method is provided for depositing silicon and silicon-containing films by atomic layer deposition (ALD). The method includes disposing the substrate in a batch processing system configured for performing ALD of the silicon-containing film, exposing the substrate to a non-saturating amount of a first precursor containing silicon, and evacuating or purging the first precursor from the batch processing system. The method further includes exposing the substrate to a saturating amount of a second precursor containing silicon or a dopant, where only one of the first and second precursors contain a halogen, and a reaction of the first and second precursors on the substrate forms a silicon or silicon-containing film and a volatile hydrogen-halogen (HX) by-product, evacuating or purging the second precursor and the HX by-product from the batch processing system, and repeating the exposing and evacuation or purging steps until the silicon or silicon-containing film has a desired thickness.
摘要翻译： 提供了通过原子层沉积（ALD）沉积硅和含硅膜的方法。 该方法包括将衬底设置在配置用于执行含硅膜的ALD的间歇处理系统中，将衬底暴露于非饱和量的含硅的第一前体，以及从批处理系统抽空或清除第一前体 。 该方法还包括将衬底暴露于含有硅或掺杂剂的饱和量的第二前体，其中第一和第二前体中只有一个含有卤素，并且衬底上的第一和第二前体的反应形成硅或 含硅膜和挥发性氢 - 卤素（HX）副产物，从间歇处理系统排出或吹扫第二前体和HX副产物，并重复曝光和排空或吹扫步骤，直到硅或硅 - 含有膜的膜具有期望的厚度。
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3.发明申请THERMAL PROCESSING SYSTEM WITH IMPROVED PROCESS GAS FLOW AND METHOD FOR INJECTING A PROCESS GAS INTO A THERMAL PROCESSING SYSTEM 有权具有改进的工艺流程的热处理系统和将工艺气体注入热处理系统的方法公开(公告)号：US20080035055A1
公开(公告)日：2008-02-14
申请号：US11463180
申请日：2006-08-08
IPC分类号： C23C16/00
CPC分类号： H01L21/67109 , C23C16/45578 , C23C16/45591 , H01L21/67098 , H01L21/67103 , H01L21/67115
摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.
摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。
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4.发明授权公开(公告)号：US09005877B2
公开(公告)日：2015-04-14
申请号：US13472442
申请日：2012-05-15
CPC分类号： G03F7/40 , G03F7/0002 , G03F7/2041 , Y10T428/24802
摘要： A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.
摘要翻译： 提供一种用于图案化层状结构的方法，其包括进行光刻以在下面的基底的水平表面上提供显影的预制图层，修改预制图案层以形成间隔开的无机材料导向件，铸造和退火自组装层 嵌段共聚物以形成横向间隔开的圆柱形特征，通过选择性地除去自组装嵌段共聚物的一个嵌段的至少一部分，并将图案转移到下面的基底来形成图案。 该方法适用于制备低于50nm的层状结构。
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5.发明授权公开(公告)号：US07964441B2
公开(公告)日：2011-06-21
申请号：US11693891
申请日：2007-03-30
IPC分类号： H01L51/40
CPC分类号： C23C16/45534 , C23C16/345 , C23C16/402 , C23C16/45536
摘要： A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2 and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2 catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2 catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.
摘要翻译： 提供了一种用于低温催化剂辅助原子层沉积诸如SiO 2和SiN的含硅膜的方法。 该方法包括将含有X-H官能团的衬底表面暴露于第一R1-X-R2催化剂和含有硅和氯的气体，以在表面上形成X /硅/氯络合物，并形成硅-X层终止 通过将X /硅/氯络合物在基材表面上暴露于第二个R1-X-R2催化剂和X-H官能团前体，与X-H官能团一起使用。 该方法还包括一种或多种集成的原位反应处理，其减少或消除对不期望的高温后沉积处理的需要。 一种反应处理包括氢化未反应的X-H官能团并从基底表面除去碳和氯杂质。 另一种反应性处理使具有另外的X-H官能团的硅-X层饱和。
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6.发明申请公开(公告)号：US20130309457A1
公开(公告)日：2013-11-21
申请号：US13472442
申请日：2012-05-15
CPC分类号： G03F7/40 , G03F7/0002 , G03F7/2041 , Y10T428/24802
摘要： A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.
摘要翻译： 提供一种用于图案化层状结构的方法，其包括进行光刻以在下面的基底的水平表面上提供显影的预制图层，修改预制图案层以形成间隔开的无机材料导向件，铸造和退火自组装层 嵌段共聚物以形成横向间隔开的圆柱形特征，通过选择性地除去自组装嵌段共聚物的一个嵌段的至少一部分，并将图案转移到下面的基底来形成图案。 该方法适用于制备低于50nm的层状结构。
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7.发明授权Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system 有权具有改进的工艺气体流量的热处理系统和将工艺气体注入热处理系统的方法公开(公告)号：US07632354B2
公开(公告)日：2009-12-15
申请号：US11463180
申请日：2006-08-08
IPC分类号： C23C16/455 , H01L21/302
CPC分类号： H01L21/67109 , C23C16/45578 , C23C16/45591 , H01L21/67098 , H01L21/67103 , H01L21/67115
摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.
摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。
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