发明授权
US07632694B2 Manufacturing method for a TFT electrode for preventing metal layer diffusion
有权
用于防止金属层扩散的TFT电极的制造方法
- 专利标题: Manufacturing method for a TFT electrode for preventing metal layer diffusion
- 专利标题(中): 用于防止金属层扩散的TFT电极的制造方法
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申请号: US11375336申请日: 2006-03-15
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公开(公告)号: US07632694B2公开(公告)日: 2009-12-15
- 发明人: Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
- 申请人: Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
- 申请人地址: TW Hsinchu TW Taoyuan TW Hsinchu TW Tao Yuan Shien TW Taipei TW Tainan County TW Hsinchu TW Miao-Li County
- 专利权人: Taiwan TFT LCD Association,Chunghwa Picture Tubes, Ltd.,AU Optronics Corp.,Quanta Display Inc.,Hannstar Display Corp.,Chi Mei Optoelectronics Corp.,Industrial Technology Research Institute,Toppoly Optoelectronics Corp.
- 当前专利权人: Taiwan TFT LCD Association,Chunghwa Picture Tubes, Ltd.,AU Optronics Corp.,Quanta Display Inc.,Hannstar Display Corp.,Chi Mei Optoelectronics Corp.,Industrial Technology Research Institute,Toppoly Optoelectronics Corp.
- 当前专利权人地址: TW Hsinchu TW Taoyuan TW Hsinchu TW Tao Yuan Shien TW Taipei TW Tainan County TW Hsinchu TW Miao-Li County
- 代理机构: Rabin & Berdo, P.C.
- 优先权: TW93117216A 20040615
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.