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    Manufacturing method for a TFT electrode for preventing metal layer diffusion
    1.
    发明授权
    Manufacturing method for a TFT electrode for preventing metal layer diffusion 有权
    用于防止金属层扩散的TFT电极的制造方法

    公开(公告)号：US07632694B2

    公开(公告)日：2009-12-15

    申请号：US11375336

    申请日：2006-03-15

    申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

    发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

    摘要： A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

    摘要翻译： 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极，并且在制造期间防止金属离子扩散，所述透明导电电极由铟锡氧化物，氧化铟锌，Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理，形成用作阻挡层的像素电极，以防止在制造期间的金属离子扩散。

    Process for forming organic semiconducting layer having molecular alignment
    2.
    发明授权
    Process for forming organic semiconducting layer having molecular alignment 有权
    用于形成具有分子对准的有机半导体层的方法

    公开(公告)号：US06737303B2

    公开(公告)日：2004-05-18

    申请号：US10301632

    申请日：2002-11-22

    申请人： Horng-Long Cheng ,  Wei-Yang Chou ,  Chai-Yuan Sheu ,  Yu-Wu Wang ,  Jia-Chong Ho ,  Chi-Chang Liao

    发明人： Horng-Long Cheng ,  Wei-Yang Chou ,  Chai-Yuan Sheu ,  Yu-Wu Wang ,  Jia-Chong Ho ,  Chi-Chang Liao

    IPC分类号： H01L2100

    CPC分类号： H01L51/0545 ,  H01L51/0012 ,  H01L51/0541

    摘要： A process for forming an organic semiconducting layer having molecular alignment. First, a photoalignment organic layer is formed on a substrate or A dielectric layer. Next, the photoalignment organic layer is irradiated by polarized light through a mask, such that the photoalignment organic layer becomes an orientation layer having molecular alignment. Finally, an organic semiconducting layer is formed on the orientation layer, such that the organic semiconducting layer aligns according to the alignment of the orientation layer to exhibit molecular alignment. The present invention can form an organic semiconducting layer with different molecular alignments in different regions over the same substrate by means of polarized light exposure through a mask.

    摘要翻译： 一种形成具有分子取向性的有机半导体层的方法。 首先，在基板或电介质层上形成光电转换有机层。 接下来，通过掩模将偏光有机层照射，使得光取向有机层成为具有分子取向的取向层。 最后，在取向层上形成有机半导体层，使得有机半导体层根据取向层的取向对准以显示分子对准。 本发明可以通过通过掩模的偏光曝光在相同的衬底上形成在不同区域中具有不同分子对准的有机半导体层。

    Method of fabricating thin film transistor TFT array
    4.
    发明申请
    Method of fabricating thin film transistor TFT array 有权
    制造薄膜晶体管TFT阵列的方法

    公开(公告)号：US20050059190A1

    公开(公告)日：2005-03-17

    申请号：US10673325

    申请日：2003-09-30

    申请人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

    发明人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

    IPC分类号： H01L29/423 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L27/124 ,  H01L27/1255

    摘要： A method of fabricating thin film transistor TFT array discloses ions of desired-plated metal and the graphs of the desired-plated area are made by oxidation-reduction materials processes ion replacement for implementing the metal wiring layout of the TFT-LCDs. This, therefore, can overcome the problem of uneasy metal etching thereto achieves the purpose of an automatic alignment. The method uses the ability of the oxidation-reduction reaction to implement the replacement for alternating the lithography etching process in the metal wiring layout as presented in the traditional technique.

    摘要翻译： 制造薄膜晶体管TFT阵列的方法公开了所需电镀金属的离子，并且通过氧化还原材料制造所需电镀区域的图形来处理用于实现TFT-LCD的金属布线布局的离子替换。 因此，能够克服金属蚀刻不牢的问题，能够实现自动对准的目的。 该方法使用氧化还原反应的能力来实现在传统技术中呈现的金属布线布局中交替光刻蚀刻工艺的替代。

    Pixel structure of an organic light-emitting diode display device and its fabrication method
    5.
    发明授权
    Pixel structure of an organic light-emitting diode display device and its fabrication method 有权

    公开(公告)号：US06522066B2

    公开(公告)日：2003-02-18

    申请号：US09803450

    申请日：2001-03-08

    申请人： Chai-Yuan Sheu ,  Wen-Chun Wang ,  Yung-Hui Yeh

    发明人： Chai-Yuan Sheu ,  Wen-Chun Wang ,  Yung-Hui Yeh

    IPC分类号： H01J162

    CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L51/5284

    摘要： A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle.

    Pixel structure an organic light-emitting diode display device and its manufacturing method
    9.
    发明授权
    Pixel structure an organic light-emitting diode display device and its manufacturing method 有权
    像素结构有机发光二极管显示装置及其制造方法

    公开(公告)号：US06515428B1

    公开(公告)日：2003-02-04

    申请号：US09722126

    申请日：2000-11-24

    申请人： Yung-Hui Yeh ,  Wen-Chun Wang ,  Chai-Yuan Sheu

    发明人： Yung-Hui Yeh ,  Wen-Chun Wang ,  Chai-Yuan Sheu

    IPC分类号： G09G310

    CPC分类号： H01L51/5284 ,  H01L27/322 ,  H01L27/3244

    摘要： A pixel structure of an active matrix full-color OLED display device and its manufacturing method are provided. The pixel structure of the display device comprises two thin film transistors, a storage capacitor, a color filter, and an OLED device structure constructed on a top surface of a substrate, a black matrix region outside the color filter region and under the thin film transistors. In this pixel, structure of the OLED display device, the OLED device structure and the color filter are integrated in a thin-film-transistor array. This simplifies the process, reduces the leakage of light and increases the contrast of the display device. A white OEL device is used to emit light. A light then passes a color filter to get red, green or blue color of light. Therefore, a full-color OLED is formed. A poly-silicon thin film transistor is used to provide current to the OLED device structure and served as an active drive device. The advantages of the display device include simple fabrication process, high-resolution, high lighting efficiency and wide viewing angle.

    摘要翻译： 提供有源矩阵全彩OLED显示装置的像素结构及其制造方法。 显示装置的像素结构包括两个薄膜晶体管，存储电容器，滤色器和构造在基板顶表面上的OLED器件结构，滤色器区域外的黑矩阵区域以及薄膜晶体管 。 在该像素中，OLED显示装置的结构，OLED器件结构和滤色器集成在薄膜晶体管阵列中。 这简化了过程，减少了光的泄漏并增加了显示设备的对比度。 白色的OEL装置用于发光。 然后，光通过滤色器以获得红色，绿色或蓝色的光。 因此，形成全色OLED。 多晶硅薄膜晶体管用于向OLED器件结构提供电流并用作有源驱动器件。 显示装置的优点包括简单的制造工艺，高分辨率，高照明效率和宽视角。