公开(公告)号：US07045817B2

公开(公告)日：2006-05-16

申请号：US10964611

申请日：2004-10-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L31/0376 ,  H01L29/04 ,  G02F27/12 ,  G02F1/1343 ,  G02F1/136

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

摘要翻译： 本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。 透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。 此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

公开(公告)号：US08640544B2

公开(公告)日：2014-02-04

申请号：US13216243

申请日：2011-08-24

申请人： Wei-Feng Lee ,  Cheng-Hsing Chen ,  Yi-Chun Lai ,  Hsing-Tai Mei

发明人： Wei-Feng Lee ,  Cheng-Hsing Chen ,  Yi-Chun Lai ,  Hsing-Tai Mei

IPC分类号： G01N29/46 ,  G01N29/12 ,  G01H13/00

CPC分类号： G01M7/00 ,  G01M5/0066

摘要： The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.

摘要翻译： 本发明公开了一种分析结构安全性的方法，该方法采用有效的振动测量信号，获得结构模型分析和校准结构模型的相互反馈，模拟灾害情况，获得结构的临界力消耗和变形规模 。 该方法用于捕获结构的稳定性指标，以分析结构安全性或应用于结构安全评估或健康监测，或甚至结构多重危害安全性测定。

公开(公告)号：US20120204646A1

公开(公告)日：2012-08-16

申请号：US13216243

申请日：2011-08-24

申请人： Wei-Feng Lee ,  Cheng-Hsing Chen ,  Yi-Chun Lai ,  Hsing-Tai Mei

发明人： Wei-Feng Lee ,  Cheng-Hsing Chen ,  Yi-Chun Lai ,  Hsing-Tai Mei

IPC分类号： G01M7/00

CPC分类号： G01M7/00 ,  G01M5/0066

摘要： The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.

摘要翻译： 本发明公开了一种分析结构安全性的方法，该方法采用有效的振动测量信号，获得结构模型分析和校准结构模型的相互反馈，模拟灾害情况，获得结构的临界力消耗和变形规模 。 该方法用于捕获结构的稳定性指标，以分析结构安全性或应用于结构安全评估或健康监测，或甚至结构多重危害安全性测定。

公开(公告)号：US07632694B2

公开(公告)日：2009-12-15

申请号：US11375336

申请日：2006-03-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L21/00

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

摘要翻译： 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极，并且在制造期间防止金属离子扩散，所述透明导电电极由铟锡氧化物，氧化铟锌，Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理，形成用作阻挡层的像素电极，以防止在制造期间的金属离子扩散。

公开(公告)号：US20100242609A1

公开(公告)日：2010-09-30

申请号：US12652330

申请日：2010-01-05

申请人： WEI-FENG LEE ,  CHENG-HSING CHEN ,  CHIA-FENG CHANG ,  HSING-TAI MEI

发明人： WEI-FENG LEE ,  CHENG-HSING CHEN ,  CHIA-FENG CHANG ,  HSING-TAI MEI

IPC分类号： G01M7/02

CPC分类号： G01M7/025 ,  G01M5/0008 ,  G01M5/0066

摘要： The invention relates bridge structure safety evaluation technology by means of combining vibration measuring and structural model analysis techniques for bridge erosion evaluation and pre-warning monitoring applications. This technology can also be applied for long-term bridge structure monitoring and safety evaluation as well as judgment and evaluation of rail structure abnormality.

摘要翻译： 本发明通过结合振动测量和桥梁侵蚀评估和预警监测应用的结构模型分析技术，结合桥梁结构安全评估技术。 该技术也可用于长期的桥梁结构监测和安全评估，以及轨道结构异常的判断和评估。

公开(公告)号：US20060202203A1

公开(公告)日：2006-09-14

申请号：US11375336

申请日：2006-03-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L29/04

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

公开(公告)号：US20050274947A1

公开(公告)日：2005-12-15

申请号：US10964611

申请日：2004-10-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

摘要翻译： 本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。 透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。 此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

公开(公告)号：US08290718B2

公开(公告)日：2012-10-16

申请号：US12652330

申请日：2010-01-05

申请人： Wei-Feng Lee ,  Cheng-Hsing Chen ,  Chia-Feng Chang ,  Hsing-Tai Mei

发明人： Wei-Feng Lee ,  Cheng-Hsing Chen ,  Chia-Feng Chang ,  Hsing-Tai Mei

IPC分类号： G01M5/00 ,  G01M7/00 ,  G06F17/40 ,  G06F19/00

CPC分类号： G01M7/025 ,  G01M5/0008 ,  G01M5/0066

摘要： The invention relates bridge structure safety evaluation technology by means of combining vibration measuring and structural model analysis techniques for bridge erosion evaluation and pre-warning monitoring applications. This technology can also be applied for long-term bridge structure monitoring and safety evaluation as well as judgment and evaluation of rail structure abnormality.

摘要翻译： 本发明通过结合振动测量和桥梁侵蚀评估和预警监测应用的结构模型分析技术，结合桥梁结构安全评估技术。 该技术也可用于长期的桥梁结构监测和安全评估，以及轨道结构异常的判断和评估。