发明授权
- 专利标题: Semiconductor device and manufacturing method of the same
- 专利标题(中): 半导体器件及其制造方法相同
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申请号: US11639411申请日: 2006-12-15
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公开(公告)号: US07633133B2公开(公告)日: 2009-12-15
- 发明人: Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
- 申请人: Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
- 申请人地址: JP Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Morrison & Foerster LLP
- 优先权: JP2005-361707 20051215
- 主分类号: H01L31/0203
- IPC分类号: H01L31/0203 ; H01L31/0216 ; H01L31/0224
摘要:
This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
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