发明授权
- 专利标题: Interconnects with harmonized stress and methods for fabricating the same
- 专利标题(中): 具有协调应力的互连和制造它的方法
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申请号: US11144742申请日: 2005-06-06
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公开(公告)号: US07638859B2公开(公告)日: 2009-12-29
- 发明人: Yung-Cheng Lu , Ming-Hsing Tsai
- 申请人: Yung-Cheng Lu , Ming-Hsing Tsai
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L23/52
摘要:
Interconnects with harmonized stress and methods for fabricating the same. An interconnect comprises a substrate having a conductive member. A composite low-k dielectric layer interposed with at least one stress-harmonizing layer therein overlies the substrate. A conductive feature in the composite low-k dielectric layer passes through the at least one stress-harmonizing layer to electrically connect the conductive member.
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