发明授权
US07642171B2 Multi-step anneal of thin films for film densification and improved gap-fill
有权
用于膜致密化和改善间隙填充的薄膜的多步退火
- 专利标题: Multi-step anneal of thin films for film densification and improved gap-fill
- 专利标题(中): 用于膜致密化和改善间隙填充的薄膜的多步退火
-
申请号: US10990002申请日: 2004-11-16
-
公开(公告)号: US07642171B2公开(公告)日: 2010-01-05
- 发明人: Nitin K. Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali J. L. Forstner , Rong Pan
- 申请人: Nitin K. Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali J. L. Forstner , Rong Pan
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Townsend and Townsend and Crew LLP
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.