发明授权
- 专利标题: Method of setting focus condition at time of exposure, apparatus for setting focus condition at time of exposure, program, and computer readable recording medium
- 专利标题(中): 在曝光时设定对焦条件的方法,曝光时设定对焦条件的设备,程序和计算机可读记录介质
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申请号: US11362126申请日: 2006-02-27
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公开(公告)号: US07643126B2公开(公告)日: 2010-01-05
- 发明人: Michio Tanaka , Masahide Tadokoro
- 申请人: Michio Tanaka , Masahide Tadokoro
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-059590 20050303
- 主分类号: G03B27/42
- IPC分类号: G03B27/42
摘要:
In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.