公开(公告)号：US07867674B2

公开(公告)日：2011-01-11

申请号：US12065829

申请日：2006-09-13

申请人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

发明人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

IPC分类号： G03C5/00 ,  G03F1/00 ,  H01L21/00

CPC分类号： G03F7/40 ,  G03F7/38

摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

公开(公告)号：US07643126B2

公开(公告)日：2010-01-05

申请号：US11362126

申请日：2006-02-27

申请人： Michio Tanaka ,  Masahide Tadokoro

发明人： Michio Tanaka ,  Masahide Tadokoro

IPC分类号： G03B27/42

CPC分类号： G03F7/70641 ,  Y10S430/136

摘要： In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.

摘要翻译： 在本发明中，在已经设定了一定的聚焦条件的光刻工艺中，基板上的膜仅暴露于透过的光源的零级光，然后显影以减小膜的第一部分 在基板上。 此外，将基板上的膜暴露于光源的零级光和较高阶光，然后显影以减少基板上的膜的第二部分。 此后，测量第一部分和第二部分的膜厚度，并且通过预先获得的膜厚度和线宽度之间的相关性，将测量的第一部分和第二部分的膜厚度转换为抗蚀剂图案的线宽度 。 然后从第一部分的转换线宽中减去第二部分的转换线宽，由此计算仅依赖于聚焦分量的线宽。 根据线宽，设置新的对焦条件。

公开(公告)号：US08927906B2

公开(公告)日：2015-01-06

申请号：US13018877

申请日：2011-02-01

申请人： Masahide Tadokoro ,  Yoshihiro Kondo ,  Takashi Saito

发明人： Masahide Tadokoro ,  Yoshihiro Kondo ,  Takashi Saito

IPC分类号： H05B11/00 ,  B05C21/00 ,  G03F7/20 ,  H05B3/20

CPC分类号： B05C21/00 ,  G03F7/20 ,  H05B3/20

摘要： The disclosed heating device is to perform a heating process on an exposed substrate formed with a resist film before a developing process, the device including a heating part to perform a heating process on the exposed substrate, the heating part including a plurality of two-dimensionally arranged heating elements; a seating part provided at an upper side of the heating part, on which the substrate is disposed; and a control part to correct a setting temperature of the heating part based on temperature correction values, and to control the heating part based on the corrected setting temperature, during the heating process on one substrate by the heating part, wherein the temperature correction values being previously obtained from measured critical dimensions of the resist pattern in another substrate formed with the resist pattern through the heating process by the heating part and then the developing process.

摘要翻译： 所公开的加热装置是在显影处理之前对形成有抗蚀剂膜的暴露的基板进行加热处理，该装置包括加热部分，以对暴露的基板进行加热处理，加热部分包括多个二维 布置加热元件; 设置在所述加热部的上侧的座部，所述基板设置在所述加热部的上侧; 以及控制部，其基于温度校正值校正加热部的设定温度，并且在由加热部在一个基板上的加热处理期间，基于校正的设定温度来控制加热部，其中，温度校正值为 先前由通过加热部分的加热处理形成的抗蚀剂图案的另一个衬底中的抗蚀剂图案的测量的临界尺寸获得，然后通过显影过程获得。

公开(公告)号：US08698052B2

公开(公告)日：2014-04-15

申请号：US13551307

申请日：2012-07-17

申请人： Masahide Tadokoro ,  Ryoichi Uemura ,  Mitsuteru Yano ,  Shinichi Shinozuka

发明人： Masahide Tadokoro ,  Ryoichi Uemura ,  Mitsuteru Yano ,  Shinichi Shinozuka

IPC分类号： H05B1/02

CPC分类号： H05B1/0233 ,  H01L21/67248

摘要： In the present invention, temperature drop amounts of heating plate regions when the substrate is mounted on a heating plate are detected to detect a warped state of the substrate. From the temperature drop amounts of the heating plate regions, correction values for set temperatures of the heating plate regions are calculated. The calculation of the correction values for the set temperatures of the heating plate regions is performed by estimating steady temperatures within the substrate to be heat-processed on the heating plate from the temperature drop amounts of the heating plate regions using a correlation obtained in advance. From the estimated steady temperatures within the substrate and the temperature drop amounts of the heating regions, the correction values for the set temperatures of the heating plate regions are calculated. Based on the correction values for the set temperatures, the set temperatures of the heating plate regions are changed.

摘要翻译： 在本发明中，检测将基板安装在加热板上时的加热板区域的温度下降量，以检测基板的翘曲状态。 根据加热板区域的温度下降量，计算加热板区域的设定温度的校正值。 通过使用预先获得的相关性，从加热板区域的温度下降量估计加热板上的待加热基板内的稳定温度来进行加热板区域的设定温度的校正值的计算。 从估计的基板内的稳定温度和加热区域的温度下降量，计算加热板区域的设定温度的校正值。 基于设定温度的校正值，改变加热板区域的设定温度。

公开(公告)号：US20110209826A1

公开(公告)日：2011-09-01

申请号：US13103708

申请日：2011-05-09

申请人： Masahide TADOKORO ,  Kunie Ogata

发明人： Masahide TADOKORO ,  Kunie Ogata

IPC分类号： C23F1/08

CPC分类号： H01L21/32139 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern.

摘要翻译： 基板处理系统包括测量膜厚，折射率，吸收系数和翘曲中的任何一个的测量装置。 该系统包括用于在基板上进行光刻以形成抗蚀剂图案的装置和蚀刻处理膜的蚀刻装置。 控制单元包括处理膜的图案的初始状态和尺寸之间的第一关系以及预定处理的处理条件和处理膜的图案的尺寸之间的第二关系。 控制单元基于测量结果从第一关系估计​​蚀刻处理后的处理膜的图案的尺寸，并根据估计结果校正光刻中的预定处理或第二关系的蚀刻的处理条件 的图案尺寸。

公开(公告)号：US20110189602A1

公开(公告)日：2011-08-04

申请号：US13018877

申请日：2011-02-01

申请人： Masahide TADOKORO ,  Yoshihiro KONDO ,  Takashi SAITO

发明人： Masahide TADOKORO ,  Yoshihiro KONDO ,  Takashi SAITO

IPC分类号： G03F7/20 ,  H05B3/20 ,  B05C21/00

CPC分类号： B05C21/00 ,  G03F7/20 ,  H05B3/20

摘要： The disclosed heating device is to perform a heating process on an exposed substrate formed with a resist film before a developing process, the device including a heating part to perform a heating process on the exposed substrate, the heating part including a plurality of two-dimensionally arranged heating elements; a seating part provided at an upper side of the heating part, on which the substrate is disposed; and a control part to correct a setting temperature of the heating part based on temperature correction values, and to control the heating part based on the corrected setting temperature, during the heating process on one substrate by the heating part, wherein the temperature correction values being previously obtained from measured critical dimensions of the resist pattern in another substrate formed with the resist pattern through the heating process by the heating part and then the developing process.

摘要翻译： 所公开的加热装置是在显影处理之前对形成有抗蚀剂膜的暴露的基板进行加热处理，该装置包括加热部分，以对暴露的基板进行加热处理，加热部分包括多个二维 布置加热元件; 设置在所述加热部的上侧的座部，所述基板设置在所述加热部的上侧; 以及控制部，其基于温度校正值校正加热部的设定温度，并且在由加热部在一个基板上的加热处理期间，基于校正的设定温度来控制加热部，其中，温度校正值为 先前由通过加热部分的加热处理形成的抗蚀剂图案的另一个衬底中的抗蚀剂图案的测量的临界尺寸获得，然后通过显影过程获得。

公开(公告)号：US07985516B2

公开(公告)日：2011-07-26

申请号：US12426600

申请日：2009-04-20

申请人： Kunie Ogata ,  Masahide Tadokoro ,  Tsuyoshi Shibata ,  Shinichi Shinozuka

发明人： Kunie Ogata ,  Masahide Tadokoro ,  Tsuyoshi Shibata ,  Shinichi Shinozuka

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F7/38 ,  H01L21/67225 ,  H01L21/67248

摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

摘要翻译： 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。

公开(公告)号：US07968260B2

公开(公告)日：2011-06-28

申请号：US12369198

申请日：2009-02-11

申请人： Masahide Tadokoro ,  Kunie Ogata

发明人： Masahide Tadokoro ,  Kunie Ogata

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： H01L21/32139 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention has: a first step of measuring, as an initial condition of a substrate, any of a film thickness of a processing film on the substrate, a refractive index of the processing film, an absorption coefficient of the processing film, and a warpage amount of the substrate; a second step of estimating a dimension of a pattern of the processing film after predetermined processing from a previously obtained first relation between the initial condition and the dimension of the pattern of the processing film based on a measurement result of the initial condition; a third step of obtaining a correction value for a processing condition of the predetermined processing from a previously obtained second relation between the processing condition of the predetermined processing and the dimension of the pattern of the processing film based on an estimation result of the dimension of the pattern; a fourth step of correcting the processing condition of the predetermined processing based on the correction value; and a fifth step of performing predetermined processing on the substrate under the corrected processing condition to form the predetermined pattern in the processing film on the substrate.

摘要翻译： 本发明具有：第一步骤，作为基板的初始状态，测量基板上的处理膜的膜厚，处理膜的折射率，处理膜的吸收系数和 基板的翘曲量; 第二步骤，基于初始条件的测量结果，从先前获得的处理膜的图案的初始状态和尺寸之间的第一关系估计​​处理膜的图案的尺寸; 第三步骤，基于预定处理的处理条件和处理膜的图案的尺寸之间的先前获得的第二关系，基于预定处理的尺寸的估计结果，获得预定处理的处理条件的校正值 模式; 第四步骤，基于校正值来校正预定处理的处理条件; 以及在校正后的处理条件下对基板进行规定处理以在基板上的处理膜中形成规定图案的第五工序。

公开(公告)号：US07910863B2

公开(公告)日：2011-03-22

申请号：US11858809

申请日：2007-09-20

申请人： Megumi Jyousaka ,  Hiroshi Tomita ,  Masahide Tadokoro

发明人： Megumi Jyousaka ,  Hiroshi Tomita ,  Masahide Tadokoro

IPC分类号： H05B1/02

CPC分类号： H01L21/67109 ,  G05D23/1932 ,  H01L21/67748

摘要： A thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate for which a photolithography process has been finished are measured. The in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. Then, in-plane tendency components improvable by setting the temperature correction values are extracted from the calculated plurality of in-plane tendency components and added to calculate an improvable in-plane tendency in the measured line widths. Then, the improvable in-plane tendency is subtracted from the in-plane tendency Z of the current processing states to calculate an after-improvement in-plane tendency.

摘要翻译： PEB单元的热板被分成多个热板区域，并且可以为每个热板区域设置温度。 用于调节热板内的温度的温度校正值可针对热板的每个热板区域而设定。 测量光刻工艺已经完成的衬底内的线宽。 使用泽尔尼克多项式将测量的线宽的平面内趋势分解成多个平面内趋势分量。 然后，从计算出的多个面内趋势分量中提取通过设定温度校正值而可以改善的面内倾向分量，并且相加以计算测量的线宽中的可改进的面内趋势。 然后，从当前处理状态的面内倾向Z中减去可改进的平面内趋势，以计算改进后的平面内趋势。

公开(公告)号：US20090104548A1

公开(公告)日：2009-04-23

申请号：US12065829

申请日：2006-09-13

申请人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

发明人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： G03F7/40 ,  G03F7/38

摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。