公开(公告)号：US07867674B2

公开(公告)日：2011-01-11

申请号：US12065829

申请日：2006-09-13

申请人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

发明人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

IPC分类号： G03C5/00 ,  G03F1/00 ,  H01L21/00

CPC分类号： G03F7/40 ,  G03F7/38

摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

公开(公告)号：US07643126B2

公开(公告)日：2010-01-05

申请号：US11362126

申请日：2006-02-27

申请人： Michio Tanaka ,  Masahide Tadokoro

发明人： Michio Tanaka ,  Masahide Tadokoro

IPC分类号： G03B27/42

CPC分类号： G03F7/70641 ,  Y10S430/136

摘要： In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.

摘要翻译： 在本发明中，在已经设定了一定的聚焦条件的光刻工艺中，基板上的膜仅暴露于透过的光源的零级光，然后显影以减小膜的第一部分 在基板上。 此外，将基板上的膜暴露于光源的零级光和较高阶光，然后显影以减少基板上的膜的第二部分。 此后，测量第一部分和第二部分的膜厚度，并且通过预先获得的膜厚度和线宽度之间的相关性，将测量的第一部分和第二部分的膜厚度转换为抗蚀剂图案的线宽度 。 然后从第一部分的转换线宽中减去第二部分的转换线宽，由此计算仅依赖于聚焦分量的线宽。 根据线宽，设置新的对焦条件。

公开(公告)号：US20060199090A1

公开(公告)日：2006-09-07

申请号：US11362126

申请日：2006-02-27

申请人： Michio Tanaka ,  Masahide Tadokoro

发明人： Michio Tanaka ,  Masahide Tadokoro

IPC分类号： G03B27/00 ,  G03C5/00

CPC分类号： G03F7/70641 ,  Y10S430/136

摘要： In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.

摘要翻译： 在本发明中，在已经设定了一定的聚焦条件的光刻工艺中，基板上的膜仅暴露于透过的光源的零级光，然后显影以减小膜的第一部分 在基板上。 此外，将基板上的膜暴露于光源的零级光和较高阶光，然后显影以减少基板上的膜的第二部分。 此后，测量第一部分和第二部分的膜厚度，并且通过预先获得的膜厚度和线宽度之间的相关性，将测量的第一部分和第二部分的膜厚度转换为抗蚀剂图案的线宽度 。 然后从第一部分的转换线宽中减去第二部分的转换线宽，由此计算仅依赖于聚焦分量的线宽。 根据线宽，设置新的对焦条件。

公开(公告)号：US20060198633A1

公开(公告)日：2006-09-07

申请号：US11362087

申请日：2006-02-27

申请人： Michio Tanaka ,  Masahide Tadokoro

发明人： Michio Tanaka ,  Masahide Tadokoro

IPC分类号： G03D5/00

CPC分类号： G03D5/00 ,  G03F7/70558 ,  G03F7/70608 ,  G03F7/70625 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67248 ,  H01L21/67253

摘要： In the present invention, in the photolithography process in which a certain processing condition has been already set, a resist film on a substrate is exposed to light using a mask, which reduces only zero-order light of a light source at a predetermined light reduction rate and transmits the light, and then heated and developed so that the film on the substrate is reduced. Thereafter, the reduction in film thickness of the resist film is measured. The measured reduction in film thickness is then converted into a line width of a resist pattern on the already-set processing condition by a correlation function between the reduction in film thickness and the line width. Based on the converted line width, the temperature setting of the heating temperature at the time of heating after the exposure is performed. Consequently, the condition setting in the photolithography process is appropriately performed, resulting in improved uniformity of the line width of the resist pattern within the substrate.

摘要翻译： 在本发明中，在已经设定了一定的处理条件的光刻工序中，使用掩模对基板上的抗蚀剂膜进行曝光，仅在预定的光衰减下仅减少光源的零级光 速率并传输光，然后加热和显影，使得底物上的膜减少。 此后，测量抗蚀剂膜的膜厚度的降低。 然后，通过薄膜厚度的减小和线宽之间的相关函数，将已测定的膜厚度的减小值转换为已设定的处理条件下的抗蚀剂图案的线宽。 基于转换的线宽，进行曝光后的加热时的加热温度的设定。 因此，适当地执行光刻工艺中的条件设置，从而改善了衬底内抗蚀剂图案的线宽的均匀性。

公开(公告)号：US20090104548A1

公开(公告)日：2009-04-23

申请号：US12065829

申请日：2006-09-13

申请人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

发明人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： G03F7/40 ,  G03F7/38

摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

公开(公告)号：US07420650B2

公开(公告)日：2008-09-02

申请号：US11362087

申请日：2006-02-27

申请人： Michio Tanaka ,  Masahide Tadokoro

发明人： Michio Tanaka ,  Masahide Tadokoro

IPC分类号： G03B27/42

CPC分类号： G03D5/00 ,  G03F7/70558 ,  G03F7/70608 ,  G03F7/70625 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67248 ,  H01L21/67253

摘要： In the present invention, in the photolithography process in which a certain processing condition has been already set, a resist film on a substrate is exposed to light using a mask, which reduces only zero-order light of a light source at a predetermined light reduction rate and transmits the light, and then heated and developed so that the film on the substrate is reduced. Thereafter, the reduction in film thickness of the resist film is measured. The measured reduction in film thickness is then converted into a line width of a resist pattern on the already-set processing condition by a correlation function between the reduction in film thickness and the line width. Based on the converted line width, the temperature setting of the heating temperature at the time of heating after the exposure is performed. Consequently, the condition setting in the photolithography process is appropriately performed, resulting in improved uniformity of the line width of the resist pattern within the substrate.

摘要翻译： 在本发明中，在已经设定了一定的处理条件的光刻工序中，使用掩模对基板上的抗蚀剂膜进行曝光，仅在预定的光衰减下仅减少光源的零级光 速率并传输光，然后加热和显影，使得底物上的膜减少。 此后，测量抗蚀剂膜的膜厚度的降低。 然后，通过薄膜厚度的减小和线宽之间的相关函数，将已测定的膜厚度的减小值转换为已设定的处理条件下的抗蚀剂图案的线宽。 基于转换的线宽，进行曝光后的加热时的加热温度的设定。 因此，适当地执行光刻工艺中的条件设置，从而改善了衬底内抗蚀剂图案的线宽的均匀性。

公开(公告)号：US07648292B2

公开(公告)日：2010-01-19

申请号：US11831622

申请日：2007-07-31

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/32

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

公开(公告)号：US20090162759A1

公开(公告)日：2009-06-25

申请号：US12065782

申请日：2006-09-13

申请人： Kunie Ogata ,  Hiroshi Tomita ,  Michio Tanaka ,  Ryoichi Uemura

发明人： Kunie Ogata ,  Hiroshi Tomita ,  Michio Tanaka ,  Ryoichi Uemura

IPC分类号： G03C5/00

CPC分类号： H01L21/67225 ,  G03F7/168 ,  G03F7/3071 ,  G03F7/40 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.

摘要翻译： 图案形成系统1包括检查装置400，存储装置502和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的状态，并输出 第一检查结果，并且在蚀刻处理之后测量和检查在基板上形成的图案的状态，并输出由此获得的第二检查结果。 存储装置502存储从第一检查结果和第二检查结果获得的相关公式。 控制部500被配置为使用相关公式从蚀刻处理之后的图案的状态的目标值获得显影处理之后的图案的状态的目标值，并且使用目标值 的显影过程之后的图案状态和第一检查结果来设定第一加热处理和/或第二加热处理的条件。

公开(公告)号：US07488127B2

公开(公告)日：2009-02-10

申请号：US11199215

申请日：2005-08-09

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B13/00 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

公开(公告)号：US07375831B2

公开(公告)日：2008-05-20

申请号：US11013784

申请日：2004-12-17

申请人： Michio Tanaka ,  Masami Yamashita

发明人： Michio Tanaka ,  Masami Yamashita

IPC分类号： G01B11/02

CPC分类号： G03F7/705 ,  G03F7/70625

摘要： In optical line width measurement performed using the scatterometry technique, the present invention measures the line width formed on a substrate more accurately than in the prior art. After a predetermined pattern is formed in a resist film on a substrate, the refractive index and the extinction coefficient of the resist film are measured. Based on the measured values, calculation is performed to obtain calculated light intensity distributions of reflected light reflected from a plurality of virtual patterns. The calculated light intensity distributions are stored, and their library is created. The substrate for which the refractive index and so on are measured is irradiated with light, and the light intensity distribution of its reflected light is measured. The light intensity distribution is collated with the calculated light intensity distributions in the library, so that the line width of the virtual pattern having a matching light intensity distribution is regarded as the line width of the real pattern. Since the library of the light intensity distributions of the virtual pattern is created based on the actually measured refractive index and so on after the formation of the pattern, an accurate line width matching the pattern state at the time of measuring the line width is measured.

摘要翻译： 在使用散射测量技术进行的光线宽度测量中，本发明比现有技术更准确地测量在衬底上形成的线宽。 在基板上的抗蚀剂膜中形成预定图案之后，测量抗蚀剂膜的折射率和消光系数。 基于测量值，执行计算以获得从多个虚拟图案反射的反射光的计算的光强度分布。 存储计算的光强度分布，并创建它们的库。 用光照射测定折射率等的基板，测定其反射光的光强度分布。 将光强度分布与库中计算的光强度分布进行比较，使得具有匹配的光强度分布的虚拟图案的线宽被视为实曲线的线宽。 由于在形成图案之后，基于实际测量的折射率等创建虚拟图案的光强度分布的库，因此测量与测量线宽度时的图案状态匹配的精确线宽。