发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
-
申请号： US11829310申请日： 2007-07-27
-
公开(公告)号： US07655974B2公开(公告)日： 2010-02-02
- 发明人: Satoru Shimada , Yoshikazu Yamaoka , Kazunori Fujita , Tomonori Tabe
- 申请人： Satoru Shimada , Yoshikazu Yamaoka , Kazunori Fujita , Tomonori Tabe
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Ditthavong, Mori & Steiner, P.C.
- 优先权： JP2006-206891 20060728
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.
公开/授权文献
- US20080023787A1 SEMICONDUCTOR DEVICE 公开/授权日：2008-01-31
信息查询
IPC分类:
