Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11829310Application Date: 2007-07-27
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Publication No.: US07655974B2Publication Date: 2010-02-02
- Inventor: Satoru Shimada , Yoshikazu Yamaoka , Kazunori Fujita , Tomonori Tabe
- Applicant: Satoru Shimada , Yoshikazu Yamaoka , Kazunori Fujita , Tomonori Tabe
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Ditthavong, Mori & Steiner, P.C.
- Priority: JP2006-206891 20060728
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.
Public/Granted literature
- US20080023787A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-01-31
Information query
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