公开(公告)号：US20100102382A1

公开(公告)日：2010-04-29

申请号：US12447817

申请日：2008-09-26

申请人： Satoru Shimada ,  Yoshikazu Yamaoka ,  Kazunori Fujita ,  Tomonori Tabe

发明人： Satoru Shimada ,  Yoshikazu Yamaoka ,  Kazunori Fujita ,  Tomonori Tabe

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66734 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/513 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7809 ,  H01L29/7813

摘要： The invention provides a trench gate type transistor in which the gate leakage current is prevented and the gate capacitance is reduced. A trench is formed in an N− type semiconductor layer. A thin silicon oxide film is formed on a region of the N− type semiconductor layer for the active region of the transistor in the trench. On the other hand, a silicon oxide film which is thicker than the silicon oxide film is formed on a region not for the active region. Furthermore, a leading portion extending from inside the trench onto the outside thereof forms a gate electrode contacting the silicon oxide film. This provides a long distance between the gate electrode at the leading portion and the corner portion of the N− type semiconductor layer, thereby preventing the gate leakage current and reducing the gate capacitance.

摘要翻译： 本发明提供了一种沟槽栅型晶体管，其中栅极漏电流被防止并且栅极电容减小。 在N型半导体层中形成沟槽。 在沟槽中的晶体管的有源区域的N型半导体层的区域上形成薄的氧化硅膜。 另一方面，在不是有源区的区域上形成比氧化硅膜厚的氧化硅膜。 此外，从沟槽内部延伸到其外部的引导部分形成与氧化硅膜接触的栅电极。 这提供了在前导部分的栅电极和N-型半导体层的角部之间的长距离，从而防止栅极漏电流并降低栅极电容。

公开(公告)号：US07692187B2

公开(公告)日：2010-04-06

申请号：US11723537

申请日：2007-03-20

申请人： Masayuki Chikamatsu ,  Atsushi Itakura ,  Tatsumi Kimura ,  Satoru Shimada ,  Yuji Yoshida ,  Reiko Azumi ,  Kiyoshi Yase

发明人： Masayuki Chikamatsu ,  Atsushi Itakura ,  Tatsumi Kimura ,  Satoru Shimada ,  Yuji Yoshida ,  Reiko Azumi ,  Kiyoshi Yase

IPC分类号： H01L51/30

CPC分类号： H01L51/0512 ,  B82Y10/00 ,  H01L51/0047 ,  Y10S977/738 ,  Y10S977/74 ,  Y10S977/936

摘要： The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.

摘要翻译： 本发明包括有机场效应晶体管，其包含由具有以下化学式表示的氟化烷基的富勒烯衍生物形成的n型有机半导体（其中R 1，R 2和R 3中的至少任一个为全氟 烷基或碳数为1〜20的部分氟化的半氟代烷基），以及场效应晶体管的制造方法，其包括使用所述富勒烯衍生物通过溶液法形成有机半导体层，对所述有机半导体层 在含有氮气或氩气或真空的气氛中进行热处理，以提供有机半导体层的增强特性。 本发明使得可以通过溶液法形成有机半导体层，并提供优异的电子迁移率和开 - 关比的有机场效应晶体管，并且即使在环境空气气氛中也能够运行。

公开(公告)号：US07646062B2

公开(公告)日：2010-01-12

申请号：US11770337

申请日：2007-06-28

申请人： Yoshikazu Yamaoka ,  Satoru Shimada

发明人： Yoshikazu Yamaoka ,  Satoru Shimada

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L27/10 ,  H01L29/73 ,  H01L29/74 ,  H01L27/148 ,  H01L29/749 ,  H01L29/768 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/7816 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66553 ,  H01L29/66621

摘要： A semiconductor device that suppresses partial discharging to a semiconductor substrate caused by local concentration of current. The semiconductor device includes a semiconductor substrate, a gate electrode buried in the semiconductor substrate, a conductor buried in the semiconductor substrate further inward from the gate electrode, a wiring layer formed in the semiconductor substrate in connection with the conductor, and an insulation film arranged between the gate electrode and the conductor. The conductor is higher than the surface of the semiconductor substrate.

摘要翻译： 一种半导体器件，其抑制由局部电流集中引起的对半导体衬底的局部放电。 半导体器件包括半导体衬底，埋在半导体衬底中的栅电极，从栅电极进一步向内埋入半导体衬底中的导体，与该导体连接形成在该半导体衬底中的布线层，以及布置在绝缘膜上的绝缘膜 在栅电极和导体之间。 导体高于半导体衬底的表面。

公开(公告)号：US07231763B2

公开(公告)日：2007-06-19

申请号：US10531426

申请日：2003-10-17

申请人： Shigeru Suzuki ,  Satoru Shimada ,  Takahiro Yamano ,  Sumiko Seki ,  Takahiko Itoh

发明人： Shigeru Suzuki ,  Satoru Shimada ,  Takahiro Yamano ,  Sumiko Seki ,  Takahiko Itoh

IPC分类号： F16D31/02

CPC分类号： F15B1/033 ,  F03D9/12 ,  F03D9/25 ,  F03D13/20 ,  F03D15/00 ,  F05B2260/406 ,  F15B1/024 ,  Y02E10/72 ,  Y02E60/16 ,  Y02P80/158

摘要： A hydraulic system 10 of the present invention has a hydraulic pump driven by a driving source 14, a hydraulic pump motor 52 driven by an operating oil discharged from the hydraulic pump and flowing in an oil path 50, an inertial body 60 connected to a rotary shaft of the hydraulic pump motor, an oil path 62 connected between an outlet port of the hydraulic pump motor and a load 22, an unloading oil path 64 branched from the oil path 62, and an on-off valve 68 inserted in the unloading oil path. In this configuration, as the on-off valve is opened and closed, a high pressure is generated in the oil path 62 by making use of kinetic energy of the inertial body. The inertial body is driven by hydraulic power and the inertial body is separated from the driving source, which also provides an effect of increasing degrees of freedom for an instrument layout.

摘要翻译： 本发明的液压系统10具有由驱动源14驱动的液压泵，由从液压泵排出的工作油驱动并在油路50中流动的液压泵马达52，连接到旋转的惯性体60 液压泵马达的轴，连接在液压泵马达的出口与负载22之间的油路62，从油路62分支的卸载油路64以及插入卸载油中的开闭阀68 路径。 在这种结构中，由于开闭阀打开和关闭，所以通过利用惯性体的动能在油路62中产生高压。 惯性体由液压动力驱动，惯性体与驱动源分离，这也提供了仪器布置的增加自由度的效果。

公开(公告)号：US20070120203A1

公开(公告)日：2007-05-31

申请号：US11604359

申请日：2006-11-27

申请人： Yoshikazu Yamaoka ,  Kazunori Fujita ,  Satoru Shimada ,  Hideki Mizuhara ,  Yasunori Inoue

发明人： Yoshikazu Yamaoka ,  Kazunori Fujita ,  Satoru Shimada ,  Hideki Mizuhara ,  Yasunori Inoue

IPC分类号： H01L29/76

CPC分类号： H01L21/28088 ,  H01L21/28114 ,  H01L21/28247 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966

摘要： A semiconductor device includes a semiconductor substrate on which a source region and a drain region are formed, an insulating film formed on the semiconductor substrate and interposed between the source region and the drain region, a gate electrode formed on the insulating film, metal-bearing particles formed on the interface between the insulation film and the gate electrode, and an insulator which has been changed from a part of metal-bearing particles protruding from an edge of the interface.

摘要翻译： 半导体器件包括其上形成有源极区和漏极区的半导体衬底，形成在半导体衬底上且介于源极区和漏极区之间的绝缘膜，形成在绝缘膜上的栅电极，金属轴承 形成在绝缘膜和栅电极之间的界面上的颗粒以及从界面边缘突出的一部分金属承载颗粒改变的绝缘体。

公开(公告)号：US4982804A

公开(公告)日：1991-01-08

申请号：US315116

申请日：1989-02-24

申请人： Hirotaka Kanazawa ,  Yoichi Takeda ,  Yukio Noguchi ,  Isamu Chikuma ,  Satoru Shimada ,  Kazuo Chikaraishi

发明人： Hirotaka Kanazawa ,  Yoichi Takeda ,  Yukio Noguchi ,  Isamu Chikuma ,  Satoru Shimada ,  Kazuo Chikaraishi

IPC分类号： B62D7/15

CPC分类号： B62D7/1536

摘要： Rotaton of a steering wheel is transmitted to a steering ratio changing mechanism which displaces an output displacement member according to the steering wheel turning angle to obtain a desired steering ratio. A displacment transmission member transmits the displacement of the output displacement member to a valve member of a hydraulic switching valve and a wheel turning rod is displaced under the force of a hydraulic power cylinder in response to displacement of the valve member. The displacement transmission member is operatively connected to the output displacement member, the valve member and the wheel turning rod to be operated to displace the valve member in a predetermined direction in response to a displacement of the output displacement member and to be operated to displace the valve member in the direction opposite to the predetermined direction in response to a displacement of the wheel turning rod generated by the displacement of the valve member, so that the wheel turning rod is displaced in response to displacement of the output displacement member with the valve member being hardly displaced.

公开(公告)号：US4646867A

公开(公告)日：1987-03-03

申请号：US791106

申请日：1985-10-24

申请人： Hirotaka Kanazawa ,  Teruhiko Takatani ,  Shigeki Furutani ,  Isamu Chikuma ,  Satoru Shimada ,  Hiroshi Eda

发明人： Hirotaka Kanazawa ,  Teruhiko Takatani ,  Shigeki Furutani ,  Isamu Chikuma ,  Satoru Shimada ,  Hiroshi Eda

IPC分类号： B62D5/22 ,  B62D7/14 ,  B62D7/15 ,  B62D5/06

CPC分类号： B62D7/1527

摘要： A four-wheel steering system comprises a steering wheel; a steering shaft which is connected to the steering wheel to be rotated in response to operation of the steering wheel and is provided with a first pinion fixedly mounted thereon; a rack bar which is supported for sliding motion in the transverse direction of the vehicle body, is provided with a first rack gear in mesh with the first pinion and a second rack gear, and is connected to the right and left front wheels by way of tie rods, a rear wheel turning force taking-out mechanism which includes a second pinion in mesh with the second rack gear on the rack bar and a rod member connected to the second pinion, and which converts the sliding motion of the rack bar into rotation of the rod member; and a rear wheel turning mechanism which is arranged to turn the rear wheels in response to rotation of the rod member. There are provided a first resilient pressing mechanism which presses one of the first and second rack gears, from the rear, towards the pinion in mesh therewith, and a second resilient pressing mechanism which presses the pinion in mesh with the other of the first and second rack gears toward said the other of the first and second rack gears.

摘要翻译： 四轮转向系统包括方向盘; 转向轴，其连接到所述方向盘以响应于所述方向盘的操作而旋转，并且设置有固定地安装在所述方向盘上的第一小齿轮; 支撑在车身横向上的滑动运动的齿条设置有与第一小齿轮和第二齿条啮合的第一齿条，并且通过以下方式连接到左右前轮 拉杆，后轮转向力取出机构，其包括与齿条上的第二齿条啮合的第二小齿轮和连接到第二小齿轮的杆构件，并且将齿条的滑动运动转换成旋转 的杆件; 以及后轮转动机构，其被布置成响应于所述杆构件的旋转而转动所述后轮。 设置有第一弹性挤压机构，其将第一和第二齿条中的一个从后部朝向与其啮合的小齿轮按压;以及第二弹性挤压机构，其将小齿轮与第一和第二齿轮中的另一个啮合 朝向所述第一和第二齿条中的另一个的齿条齿轮。

公开(公告)号：US4610328A

公开(公告)日：1986-09-09

申请号：US696144

申请日：1985-01-29

申请人： Hirotaka Kanazawa ,  Teruhiko Takatani ,  Shigeki Furutani ,  Isamu Chikuma ,  Satoru Shimada ,  Hiroshi Eda

发明人： Hirotaka Kanazawa ,  Teruhiko Takatani ,  Shigeki Furutani ,  Isamu Chikuma ,  Satoru Shimada ,  Hiroshi Eda

IPC分类号： B62D7/15 ,  B62D5/10

CPC分类号： B62D7/1527

摘要： The rear wheels of a vehicle are turned in response to the turning of the front wheels upon operation of the steering wheel. A rack member is provided to be operatively connected with a movable member of the front wheel steering system which is moved right and left in response to operation of the steering wheel so that the rack member is moved together with the movable member. The rack member is in mesh with a pinion fixed to an end of an output shaft whose rotation is transmitted to the rear wheel steering system as steering force for moving it by way of a transmission shaft.

摘要翻译： 车辆的后轮在方向盘操作时响应于前轮的转动而转动。 齿条构件设置成与前轮转向系统的可动构件可操作地连接，该可动构件响应于方向盘的操作而左右移动，使得齿条构件与可动构件一起移动。 齿条构件与固定到输出轴的端部的小齿轮啮合，该小齿轮的旋转作为用于通过传动轴移动的转向力传递到后轮转向系统。

公开(公告)号：US08110463B2

公开(公告)日：2012-02-07

申请号：US12363553

申请日：2009-01-30

申请人： Satoru Shimada ,  Yasuhiro Takeda ,  Seiji Otake

发明人： Satoru Shimada ,  Yasuhiro Takeda ,  Seiji Otake

IPC分类号： H01L21/8249

CPC分类号： H01L21/2652 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of fabricating a semiconductor device includes a first step of forming a defect suppression film suppressing increase in a defect due to implantation of an impurity on a semiconductor substrate, a second step of forming an active region on a surface of the semiconductor substrate by implanting the impurity through the defect suppression film, a third step of removing the defect suppression film and a fourth step of forming an interface state suppression film suppressing increase in an interface state density of the active region on the active region.

摘要翻译： 一种制造半导体器件的方法包括：形成缺陷抑制膜的第一步骤，其抑制由于在半导体衬底上注入杂质引起的缺陷的增加;第二步骤，通过注入在半导体衬底的表面上形成有源区 通过缺陷抑制膜的杂质，除去缺陷抑制膜的第三步骤，以及形成界面状态抑制膜抑制活性区域上的有源区的界面态密度增加的第四步骤。

公开(公告)号：US07655974B2

公开(公告)日：2010-02-02

申请号：US11829310

申请日：2007-07-27

申请人： Satoru Shimada ,  Yoshikazu Yamaoka ,  Kazunori Fujita ,  Tomonori Tabe

发明人： Satoru Shimada ,  Yoshikazu Yamaoka ,  Kazunori Fujita ,  Tomonori Tabe

IPC分类号： H01L29/76

CPC分类号： H01L21/761 ,  H01L21/763 ,  H01L27/088 ,  H01L29/1087 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.

摘要翻译： 一种半导体器件，其减小半导体元件之间的隔离区域的宽度。 半导体器件包括半导体衬底，形成在半导体衬底上的外延层，形成在半导体衬底和外延层之间的掩埋层，形成在外延层中以围绕掩埋层的第一沟槽，以及绝缘膜 形成在第一个沟槽。