发明授权
- 专利标题： Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
- 专利标题（中）： 使用应变硅锗层的选择性外延的互补金属氧化物半导体晶体管技术
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申请号： US11746141申请日： 2007-05-09
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公开(公告)号： US07659587B2公开(公告)日： 2010-02-09
- 发明人: Yee-Chia Yeo , Chun-Chieh Lin , Fu-Liang Yang , Chen Ming Hu
- 申请人： Yee-Chia Yeo , Chun-Chieh Lin , Fu-Liang Yang , Chen Ming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A CMOS integrated circuit includes a substrate having an NMOS region with a P-well and a PMOS region with an N-well. A shallow trench isolation (STI) region is formed between the NMOS and PMOS regions and a composite silicon layer comprising a strained SiGe layer is formed over said P well region and over said N well region. The composite silicon layer is disconnected at the STI region. Gate electrodes are then formed on the composite layer in the NMOS and PMOS regions.
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