发明授权
- 专利标题: Semiconductor component with MIM capacitor
- 专利标题(中): 具有MIM电容器的半导体元件
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申请号: US12131728申请日: 2008-06-02
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公开(公告)号: US07659602B2公开(公告)日: 2010-02-09
- 发明人: Stefan Tegen , Klaus Muemmler , Peter Baars , Odo Wunnicke
- 申请人: Stefan Tegen , Klaus Muemmler , Peter Baars , Odo Wunnicke
- 申请人地址: DE Munich
- 专利权人: Qimonda AG
- 当前专利权人: Qimonda AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L49/00
- IPC分类号: H01L49/00
摘要:
A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.
公开/授权文献
- US20090294907A1 SEMICONDUCTOR COMPONENT WITH MIM CAPACITOR 公开/授权日:2009-12-03