Solder bump structures for semiconductor device packaging is provided. In one embodiment, a semiconductor device comprises a substrate having a bond pad and a first passivation layer formed thereabove, the first passivation layer having an opening therein exposing a portion of the bond pad. A metal pad layer is formed on a portion of the bond pad, wherein the metal pad layer contacts the bond pad. A second passivation layer is formed above the metal pad layer, the second passivation layer having an opening therein exposing a portion of the metal pad layer. A patterned and etched polyimide layer is formed on a portion of the metal pad layer and a portion of the second passivation layer. A conductive layer is formed above a portion of the etched polyimide layer and a portion of the metal pad layer, wherein the conductive layer contacts the metal pad layer. A conductive bump structure is connected to the conductive layer.