发明授权
US07670916B2 Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same
有权
用Sb，Ga或Bi掺杂的半导体器件及其制造方法
- 专利标题： Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same
- 专利标题（中）： 用Sb，Ga或Bi掺杂的半导体器件及其制造方法
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申请号： US12417432申请日： 2009-04-02
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公开(公告)号： US07670916B2公开(公告)日： 2010-03-02
- 发明人: Sang-Hun Jeon , Chung-Woo Kim , Hyun-Sang Hwang , Sung-Kweon Baek , Sang-Moo Choi
- 申请人： Sang-Hun Jeon , Chung-Woo Kim , Hyun-Sang Hwang , Sung-Kweon Baek , Sang-Moo Choi
- 申请人地址： KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Consulting, PLLC
- 优先权： KR10-2005-0003982 20050115
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/76
摘要：
A semiconductor memory device includes a first dopant area and a second dopant area in a semiconductor substrate, the first dopant area and the second dopant area doped with one selected from the group consisting of Sb, Ga, and Bi. The semiconductor memory device includes an insulating layer disposed in contact with the first dopant area and the second dopant area, and a gate electrode layer disposed in contact with the insulating layer.
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