发明授权
- 专利标题： Ultra-thin oxide bonding for S1 to S1 dual orientation bonding
- 专利标题（中）： 超薄氧化物结合用于S1至S1双向接合
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申请号： US11453444申请日： 2006-06-14
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公开(公告)号： US07670928B2公开(公告)日： 2010-03-02
- 发明人: Mohamad A. Shaheen , Willy Rachmady , Peter Tolchinsky
- 申请人： Mohamad A. Shaheen , Willy Rachmady , Peter Tolchinsky
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46
摘要：
A multi-layered substrate with bulk substrate characteristics and processes for the fabrication of such substrates are herein disclosed. The multi-layered substrate can include a first layer, a second layer and an interfacial layer therebetween. The first and second layers can be silicon, germanium, or any other suitable material of the same or different crystal orientations. The interfacial layer can be an oxide layer from about 5 Angstroms to about 50 Angstroms.