发明授权
US07674926B1 Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
有权
掺杂基取代的半导体前体化合物，含有它们的组合物以及制备这些化合物和组合物的方法
- 专利标题： Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
- 专利标题（中）： 掺杂基取代的半导体前体化合物，含有它们的组合物以及制备这些化合物和组合物的方法
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申请号： US10956714申请日： 2004-10-01
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公开(公告)号： US07674926B1公开(公告)日： 2010-03-09
- 发明人: Wenzhuo Guo , Vladimir K. Dioumaev , Brent Ridley , Fabio Zūrcher , Joerg Rockenberger , James Montague Cleeves
- 申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Brent Ridley , Fabio Zūrcher , Joerg Rockenberger , James Montague Cleeves
- 申请人地址： US CA Milpitas
- 专利权人： Kovio, Inc.
- 当前专利权人： Kovio, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： The Law Offices of Andrew D. Fortney
- 代理商 Andrew D. Fortney; William E. Brow
- 主分类号： C07F5/02
- IPC分类号： C07F5/02 ; C07F9/02 ; C07F9/30 ; C07F7/02
摘要：
Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.