发明授权
- 专利标题: Semiconductor wafer and method of fabricating the same
- 专利标题(中): 半导体晶片及其制造方法
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申请号: US11463137申请日: 2006-08-08
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公开(公告)号: US07675091B2公开(公告)日: 2010-03-09
- 发明人: Young-Soo Park , Kyoo-Chul Cho , Shin-Hyeok Han , Tae-Soo Kang
- 申请人: Young-Soo Park , Kyoo-Chul Cho , Shin-Hyeok Han , Tae-Soo Kang
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2005-0072928 20050809
- 主分类号: H01L29/80
- IPC分类号: H01L29/80
摘要:
Disclosed is a semiconductor wafer and method of fabricating the same. The semiconductor wafer is comprised of a semiconductor layer formed on an insulation layer on a base substrate. The semiconductor layer includes a surface region organized in a first crystallographic orientation, and another surface region organized in a second crystallographic orientation. The performance of a semiconductor device with unit elements that use charges, which are activated in high mobility to the crystallographic orientation, as carriers is enhanced. The semiconductor wafer is completed by forming the semiconductor layer with the second crystallographic orientation on the plane of the first crystallographic orientation, growing an epitaxial layer, forming the insulation layer on the epitaxial layer, and then bonding the insulation layer to the base substrate.
公开/授权文献
- US20070034950A1 SEMICONDUCTOR WAFER AND METHOD OF FABRICATING THE SAME 公开/授权日:2007-02-15