公开(公告)号：US07675091B2

公开(公告)日：2010-03-09

申请号：US11463137

申请日：2006-08-08

申请人： Young-Soo Park ,  Kyoo-Chul Cho ,  Shin-Hyeok Han ,  Tae-Soo Kang

发明人： Young-Soo Park ,  Kyoo-Chul Cho ,  Shin-Hyeok Han ,  Tae-Soo Kang

IPC分类号： H01L29/80

CPC分类号： H01L29/045 ,  H01L21/76251 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78687 ,  H01L29/78696

摘要： Disclosed is a semiconductor wafer and method of fabricating the same. The semiconductor wafer is comprised of a semiconductor layer formed on an insulation layer on a base substrate. The semiconductor layer includes a surface region organized in a first crystallographic orientation, and another surface region organized in a second crystallographic orientation. The performance of a semiconductor device with unit elements that use charges, which are activated in high mobility to the crystallographic orientation, as carriers is enhanced. The semiconductor wafer is completed by forming the semiconductor layer with the second crystallographic orientation on the plane of the first crystallographic orientation, growing an epitaxial layer, forming the insulation layer on the epitaxial layer, and then bonding the insulation layer to the base substrate.

摘要翻译： 公开了半导体晶片及其制造方法。 半导体晶片由在基底基板上的绝缘层上形成的半导体层构成。 半导体层包括以第一晶体取向组织的表面区域和以第二晶体取向组织的另一表面区域。 带有单元元件的半导体器件的性能随着载流子的增强而被使用以高结晶取向的高迁移率激活的电荷。 半导体晶片通过在第一晶体取向的平面上形成具有第二晶体取向的半导体层，生长外延层，在外延层上形成绝缘层，然后将绝缘层接合到基底来完成。

公开(公告)号：US07573123B2

公开(公告)日：2009-08-11

申请号：US11775130

申请日：2007-07-09

申请人： Young-Soo Park ,  Kyoo-Chul Cho ,  Hee-Sung Kim ,  Tae-Soo Kang ,  Sam-Jong Choi

发明人： Young-Soo Park ,  Kyoo-Chul Cho ,  Hee-Sung Kim ,  Tae-Soo Kang ,  Sam-Jong Choi

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L21/76254 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/66795

摘要： Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.

摘要翻译： 提供半导体器件及其形成方法。 在一个实施例中，半导体器件包括半导体层，第一和第二半导体鳍片，绝缘层和鳍间连接构件。 第一和第二半导体散热片放置在半导体层上，具有不同的晶体方向。 第一半导体鳍状物与半导体层连接，具有与半导体层相同的晶体方向。 绝缘层介于第二半导体鳍片和半导体层之间，并且具有插入第一半导体鳍片的开口。 翅片间连接构件将第一半导体翅片和第二半导体翅片在绝缘层上连接起来。

公开(公告)号：US20080246077A1

公开(公告)日：2008-10-09

申请号：US12012592

申请日：2008-02-04

申请人： Young-Soo Park ,  Sam-Jong Choi ,  Kyoo-Chul Cho ,  Tae-Soo Kang

发明人： Young-Soo Park ,  Sam-Jong Choi ,  Kyoo-Chul Cho ,  Tae-Soo Kang

IPC分类号： H01L27/108 ,  H01L21/425

CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L21/26506 ,  H01L29/40114 ,  H01L29/42332

摘要： In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.

摘要翻译： 在通过该方法制造半导体存储器件和半导体存储器件的方法中，该方法包括形成包括具有离子注入层的第一介电层和没有离子注入层的第二电介质层的多层电介质结构， 在半导体衬底上; 通过热处理多层电介质结构，通过离子注入层的离子扩散来在第一和第二电介质层中形成纳米晶体; 以及在所述多层电介质结构上形成栅电极。

公开(公告)号：US07919365B2

公开(公告)日：2011-04-05

申请号：US11702211

申请日：2007-02-05

申请人： Chang-Jung Kim ,  I-Hun Song ,  Dong-Hun Kang ,  Young-Soo Park ,  Eun-Ha Lee

发明人： Chang-Jung Kim ,  I-Hun Song ,  Dong-Hun Kang ,  Young-Soo Park ,  Eun-Ha Lee

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/78618

摘要： Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

摘要翻译： 提供了制造ZnO薄膜结构和ZnO薄膜晶体管（TFT）的方法，以及ZnO薄膜结构和ZnO薄膜晶体管。 制造ZnO薄膜结构的方法可以包括在氧气氛中在衬底上形成ZnO薄膜，在ZnO薄膜上形成对氧具有亲和性的金属的氧扩散层，并加热ZnO薄膜和氧 扩散层将ZnO薄膜的氧气扩散到氧扩散层中。

公开(公告)号：US07724156B2

公开(公告)日：2010-05-25

申请号：US11598028

申请日：2006-11-13

申请人： Young-Soo Park ,  Jae-Gwa Lee

发明人： Young-Soo Park ,  Jae-Gwa Lee

IPC分类号： H03M11/00

CPC分类号： G06F3/0236

摘要： A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and any one of the displayed characters is marked with a selection indication. When a move key is pressed, the duration of the key press of the move key is measured and the selection indication is sequentially moved. When input of the move key is released, a character marked with the selection indication is entered.

摘要翻译： 提供了一种终端中的字符输入方法和装置，其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中，当按下表示代表性字符的键时，显示属于由代表字符表示的字符集的字符，并且显示字符中的任一个用选择指示标记。 当按下移动键时，测量移动键的按键持续时间，顺序移动选择指示。 当释放移动键的输入时，输入标有选择指示的字符。

公开(公告)号：US20070241333A1

公开(公告)日：2007-10-18

申请号：US11703255

申请日：2007-02-07

申请人： Jae-Chul Park ,  Young-Soo Park ,  Young-Kwan Cha

发明人： Jae-Chul Park ,  Young-Soo Park ,  Young-Kwan Cha

IPC分类号： H01L31/00

CPC分类号： H01L29/78606 ,  H01L27/1296 ,  H01L27/3244

摘要： An amorphous silicon thin film transistor, an organic light-emitting display (OLED) device including the same and method thereof are provided. The example amorphous silicon thin film transistor may include an amorphous silicon thin film transistor portion including a gate electrode, a gate insulating layer, an amorphous silicon layer, and source/drain electrodes and a heat generating portion generating heat and applying the heat to the amorphous silicon layer to reduce a threshold voltage of the amorphous silicon thin film transistor portion. The example method may include applying heat to an amorphous silicon layer if a threshold voltage of an amorphous silicon thin film transistor rises above a default level, the amorphous silicon thin film transistor including the amorphous silicon layer, the applied heat configured to reset the threshold voltage to the default level. The example OLED device may include a substrate and a plurality of pixels arranged in a matrix form on the substrate, each of the pixels comprising a switching transistor, a driving transistor, and an organic light-emitting diode.

摘要翻译： 提供非晶硅薄膜晶体管，包括该非晶硅薄膜晶体管的有机发光显示器件（OLED）器件及其方法。 示例性非晶硅薄膜晶体管可以包括非晶硅薄膜晶体管部分，其包括栅极，栅极绝缘层，非晶硅层和源极/漏极电极和产生热量的发热部分，并将热量施加到非晶硅 硅层以降低非晶硅薄膜晶体管部分的阈值电压。 如果非晶硅薄膜晶体管的阈值电压上升到默认水平以上，则非晶硅薄膜晶体管包括非晶硅层，施加的热量被配置为复位阈值电压 到默认级别。 示例OLED器件可以包括衬底和以矩阵形式布置在衬底上的多个像素，每个像素包括开关晶体管，驱动晶体管和有机发光二极管。

公开(公告)号：US20070229315A1

公开(公告)日：2007-10-04

申请号：US11605344

申请日：2006-11-29

申请人： Young-Soo Park ,  Jae-Gwa Lee

发明人： Young-Soo Park ,  Jae-Gwa Lee

IPC分类号： H03M11/00

CPC分类号： G06F3/0236 ,  H04M1/72552 ,  H04M2250/70

摘要： A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and a character among the displayed characters is marked with a selection indication. When a move key is pressed, the duration is identified and compared with a criterion time. If the selection indication is equal to or longer than the criterion time, the character marked with the selection indication is entered.

摘要翻译： 提供了一种终端中的字符输入方法和装置，其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中，当按下表示代表性字符的键时，显示属于由代表字符表示的字符集的字符，并且显示字符中的字符用选择指示标记。 当按下移动键时，识别持续时间并与标准时间进行比较。 如果选择指示等于或长于标准时间，则输入用选择指示标记的字符。

公开(公告)号：US20070150557A1

公开(公告)日：2007-06-28

申请号：US11643168

申请日：2006-12-21

申请人： Young-Ho Kim ,  Young-Soo Park ,  Jun-Young Jung ,  Joon-Young Choi ,  Geun-Ho Lee ,  Jae-Gwa Lee ,  Pan-Yuh Joo ,  Ju-Pil Kim ,  Hyun-Jeong Kang

发明人： Young-Ho Kim ,  Young-Soo Park ,  Jun-Young Jung ,  Joon-Young Choi ,  Geun-Ho Lee ,  Jae-Gwa Lee ,  Pan-Yuh Joo ,  Ju-Pil Kim ,  Hyun-Jeong Kang

IPC分类号： G06F15/16

CPC分类号： G06Q30/02

摘要： An apparatus and method are disclosed for providing location-based advertisement information in a BWA communication system, in which a shop terminal provides advertisement information to a service provider server. The service provider server uses the advertisement information as accounting information and provides path guidance information to a user terminal. A Radio Access Station (“RAS”) broadcasts or selectively sends the advertisement information to the user terminal and sends path guidance approval information received from the user terminal to the service provider server. The user terminal receives the advertisement information from the RAS, sends the path guidance approval information according to user selection, receives the path guidance information from the service provider server, and invokes a path guidance function.

摘要翻译： 公开了一种用于在BWA通信系统中提供基于位置的广告信息的装置和方法，其中商店终端向服务提供商服务器提供广告信息。 服务提供商服务器使用广告信息作为会计信息，并向用户终端提供路径引导信息。 无线电接入站（“RAS”）广播或选择性地向用户终端发送广告信息，并将从用户终端接收的路径指导批准信息发送到服务提供商服务器。 用户终端从RAS接收广告信息，根据用户选择发送路径引导批准信息，从服务提供者服务器接收路径引导信息，并调用路径引导功能。

公开(公告)号：US20060284113A1

公开(公告)日：2006-12-21

申请号：US11453775

申请日：2006-06-16

申请人： Seung-Hyuk Chang ,  I-Hun Song ,  Young-Soo Park ,  Suk-Pil Kim ,  Hoon Kim

发明人： Seung-Hyuk Chang ,  I-Hun Song ,  Young-Soo Park ,  Suk-Pil Kim ,  Hoon Kim

IPC分类号： G21G5/00 ,  A61N5/00

CPC分类号： G03F7/70241 ,  G03F7/70941

摘要： An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2

摘要翻译： 提供了一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。 第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。 第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。 从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB＆gt;和i＆lt; 2＆gt;可以满足以下等式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1t＆gt; cos＆lt; 1＆lt; 1＆lt; 2＆lt; > cos i <2> <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “引线”→R 1> = R 1t＆lt; 2＆gt;＆lt; 2＆lt;＆lt; =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <2> 2t 2 “in-line-formula description =”In-line Formulas“end =”tail“？>

公开(公告)号：US20060134531A1

公开(公告)日：2006-06-22

申请号：US11274474

申请日：2005-11-16

申请人： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

发明人： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

摘要： A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.

摘要翻译： 光刻用掩模及其制造方法。 掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域， 其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。 该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成 具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。