Invention Grant
- Patent Title: Method and device of ion source generation
- Patent Title (中): 离子源生成方法和装置
-
Application No.: US12126312Application Date: 2008-05-23
-
Publication No.: US07687784B2Publication Date: 2010-03-30
- Inventor: Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
- Applicant: Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
- Applicant Address: TW Hsinchu US CA San Jose
- Assignee: Advanced Ion Beam Technology, Inc.,Advanced Ion Beam Technology, Inc.
- Current Assignee: Advanced Ion Beam Technology, Inc.,Advanced Ion Beam Technology, Inc.
- Current Assignee Address: TW Hsinchu US CA San Jose
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW97104687A 20080205
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J27/02 ; H01J49/10
Abstract:
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
Public/Granted literature
- US20090194704A1 METHOD AND DEVICE OF ION SOURCE GENERATION Public/Granted day:2009-08-06
Information query
