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    Apparatus for decelerating ion beams with minimal energy contamination
    1.
    发明授权
    Apparatus for decelerating ion beams with minimal energy contamination 有权
    用于以最小能量污染减速离子束的装置

    公开(公告)号：US06489622B1

    公开(公告)日：2002-12-03

    申请号：US09516663

    申请日：2000-03-01

    Applicant: Jin-Liang Chen ,  Linuan Chen

    Inventor： Jin-Liang Chen ,  Linuan Chen

    IPC: G21K510

    CPC classification number: H01J37/3171 ,  H01J2237/04756 ,  H01J2237/057

    Abstract: An ion implantation apparatus is disclosed in this invention. The ion implantation apparatus includes a target chamber for containing a target for implantation and an ion source chamber includes an ion source with a mass filter for generating an ion beam with certain mass and original energy. The ion source chamber further includes beam deceleration optics for decelerating the ion beam from the original energy to the desired final energy. The ion beam apparatus is able to accurately direct low energy ions to a target wafer. The beam deceleration optics further includes a plurality of electrodes for generating an electric field for spreading the charged ion beam over an angular range to accurately control the trajectory paths of ions of different energy levels. The purpose is to eliminate the energy contamination by more accurately controlling the energy range of the charged ions that reach the target for implantation and to block the neutralized particle and ions of higher energy from reaching the target for implantation.

    Abstract translation: 本发明公开了一种离子注入装置。 离子注入装置包括用于容纳用于植入的靶的靶室，离子源室包括具有用于产生具有一定质量和原始能量的离子束的质量过滤器的离子源。 离子源室还包括用于将离子束从原始能量减速到期望的最终能量的光束减速光学器件。 离子束装置能够将低能离子精确地引导到目标晶片。 光束减速光学器件还包括多个电极，用于产生用于在带电范围内扩散带电离子束的电场，以精确地控制不同能级的离子的轨迹路径。 其目的是通过更精确地控制到达目标的带电离子的能量范围来消除能量污染，并且阻止较高能量的中和颗粒和离子到达目标以进行植入。

    Apparatus and method for reducing space charge of ion beams and wafer charging
    4.
    发明授权
    Apparatus and method for reducing space charge of ion beams and wafer charging 失效
    用于减少离子束和晶圆充电的空间电荷的装置和方法

    公开(公告)号：US06313428B1

    公开(公告)日：2001-11-06

    申请号：US09416574

    申请日：1999-10-12

    Applicant: Jin-Liang Chen ,  Linuan Chen

    Inventor： Jin-Liang Chen ,  Linuan Chen

    IPC: B23K1000

    CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

    Abstract: An apparatus for ion beam neutralization is disclosed in this invention. The apparatus is a plasma flood source with an arc discharge chamber enclosed in a source housing with sufficient cooling so that the housing temperature is near room temperature. Arc discharge between a filament and the arc chamber ionizes the bleeding gas atoms or molecules in the arc chamber and produces plasma. The low energy electrons together with ions in the plasma drift out of the arc chamber and neutralize the passing ion beam. The sufficiently cooled source housing prevents radiation to the processed wafers, reduces metal particle concentration in the plasma and therefore metal contamination on the wafers, and keeps beamline pressure low while more electrons are extracted from the flood source through the apertures with larger area.

    Abstract translation: 在本发明中公开了一种用于离子束中和的装置。 该装置是具有电弧放电室的等离子体洪水源，其包围在具有足够冷却的源壳体中，使得壳体温度接近室温。 灯丝与电弧室之间的电弧放电使电弧室中的渗出气体原子或分子电离，产生等离子体。 等离子体中的低能电子与离子一起漂移到电弧室外并中和通过的离子束。 充分冷却的源壳体防止辐射到经处理的晶片，减少了等离子体中的金属颗粒浓度，并因此降低了晶片上的金属污染，并且将束线压力保持在较低水平，同时通过具有较大面积的孔径从洪水源中提取更多的电子。

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