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    PN structure formed by improved doping methods to simplify manufacturing process of diodes for solar cells
    3.
    发明授权
    PN structure formed by improved doping methods to simplify manufacturing process of diodes for solar cells 有权
    PN结构通过改进的掺杂方法形成，以简化太阳能电池二极管的制造工艺

    公开(公告)号：US09455363B2

    公开(公告)日：2016-09-27

    申请号：US13920077

    申请日：2013-06-17

    申请人： Jiong Chen ,  Junhua Hong

    发明人： Jiong Chen ,  Junhua Hong

    IPC分类号： H01L31/068 ,  H01L31/18 ,  H01L21/265 ,  H01L21/266

    CPC分类号： H01L31/0682 ,  H01L21/26586 ,  H01L21/266 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.

    摘要翻译： 公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，然后形成具有开放区域的阻挡层。 通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。 引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触 从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。 由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

    NEW PN STRUCTURE FORMED BY IMPROVED DOPING METHODS TO SIMPLIFY MANUFACTURING PROCESS OF DIODES FOR SOLAR CELLS
    4.
    发明申请
    NEW PN STRUCTURE FORMED BY IMPROVED DOPING METHODS TO SIMPLIFY MANUFACTURING PROCESS OF DIODES FOR SOLAR CELLS 审中-公开
    通过改进的掺杂方法形成的新型PN结构简化了太阳能电池二极管的制造工艺

    公开(公告)号：US20140366936A1

    公开(公告)日：2014-12-18

    申请号：US13920077

    申请日：2013-06-17

    申请人： Jiong Chen ,  Junhua Hong

    发明人： Jiong Chen ,  Junhua Hong

    IPC分类号： H01L31/18 ,  H01L31/068

    CPC分类号： H01L31/0682 ,  H01L21/26586 ,  H01L21/266 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.

    摘要翻译： 公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，随后形成具有开放区域的阻挡层。 通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。 引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触 从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。 由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。