公开(公告)号：US20100301236A1

公开(公告)日：2010-12-02

申请号：US12472316

申请日：2009-05-26

申请人： Shih-Yung Shieh ,  Cheng-Hui Shen

发明人： Shih-Yung Shieh ,  Cheng-Hui Shen

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01L21/265

摘要： The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.

摘要翻译： 本发明公开了一种低温离子注入，通过在植入过程结束之后并且在晶片移动到外部环境中之前执行加热过程。 本发明在不迟于实施真空排气过程的时候主动地提高晶片温度，使得离子注入机内的真空环境和离子注入机外部的外部环境之间的温度差引起的冷凝水分被有效地最小化。 可以在负载锁上加热晶片，用于传送晶片和/或注入室的机器人。 可以通过嵌入在用于保持晶片的保持器中的气体，液体，光和/或加热器来加热晶片。

公开(公告)号：US20120196047A1

公开(公告)日：2012-08-02

申请号：US13016912

申请日：2011-01-28

申请人： Cheng-Hui Shen ,  Zhimin Wan

发明人： Cheng-Hui Shen ,  Zhimin Wan

IPC分类号： C23C14/48 ,  G06G7/62 ,  G06F17/10 ,  B05C11/00

CPC分类号： H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

摘要： To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

摘要翻译： 为了选择用离子注入工具的离子注入光束扫描实际工件所使用的相对速度分布，模拟了虚拟工件的注入。 基于植入物轮廓和相对速度分布，跨虚拟工件计算剂量分布。 然后基于计算的剂量分布和用于计算剂量分布的相对速度分布来确定新的相对速度分布。 然后使用新的相对速度分布计算新的剂量分布。 确定新的相对速度分布，并且迭代地计算相应的新剂量分布，直到新的剂量分布满足一个或多个预定标准。 当新剂量分布满足一个或多个预定标准时，新的相对速度分布被存储为所选择的相对速度分布。

公开(公告)号：US20110037000A1

公开(公告)日：2011-02-17

申请号：US12539558

申请日：2009-08-11

申请人： Cheng-Hui SHEN ,  Don BERRIAN

发明人： Cheng-Hui SHEN ,  Don BERRIAN

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/31701

摘要： Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

摘要翻译： 最初，离子束形成为入射在晶片上的细长形状，其中形状具有长于晶片直径的第一轴的长度，以及沿着比晶片直径短的第二轴的宽度。 然后，晶片的中心以与移动速度相交的扫描路径移动，并且晶片以旋转速度同时旋转。 在同时移动和旋转期间，当晶片与离子束相交时，晶片与离子束完全重叠，并且旋转速度至多为移动速度的几倍。 移动速度和旋转速度都可以是恒定的，或者具有相对于跨越晶片的离子束的位置的速度分布。

公开(公告)号：US07750323B1

公开(公告)日：2010-07-06

申请号：US12465189

申请日：2009-05-13

申请人： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

发明人： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

IPC分类号： H01J37/317 ,  H01J37/08 ,  H01L21/265

CPC分类号： H01J37/3172 ,  H01J37/3023 ,  H01J2237/043 ,  H01J2237/045 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30483

摘要： An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

摘要翻译： 提供一种用于植入晶片的离子注入机和方法，其中该方法包括以下步骤。 首先，晶片至少具有需要第一掺杂密度的第一部分，并且提供需要第二掺杂密度的第二部分。 第一掺杂密度大于第二掺杂密度。 此后，通过具有第一扫描参数值的离子束扫描第一部分，并且用第二扫描参数值用离子束扫描第二部分。 第一扫描参数值可以是第一扫描速度，并且第二扫描参数值可以是不同于第一扫描速度的第二扫描速度。 或者，第一扫描参数值可以是第一束电流，并且第二扫描参数值可以是不同于第一束电流的第二束电流。

公开(公告)号：US07709364B1

公开(公告)日：2010-05-04

申请号：US12468822

申请日：2009-05-19

申请人： Ko-Chuan Jen ,  Cheng-Hui Shen

发明人： Ko-Chuan Jen ,  Cheng-Hui Shen

IPC分类号： H01L21/265

CPC分类号： H01L21/265

摘要： Techniques for low temperature ion implantation are disclosed. After a wafer is cooled to a temperature lower than a temperature of an environment outside of a chamber where the wafer is implanted, the cooled wafer is implanted by projecting an ion beam on the cooled wafer with a temperature adjusting apparatus being operated to cool the wafer simultaneously. Hence, heat produced by the ion beam on the implanted wafer is essentially removed by the temperature adjusting apparatus. Then, after the majority of the implanting process is performed, the temperature adjusting apparatus is turned down or off. Hence, during the residual implanting process, heat produced by the ion beam on the implanted wafer at least partially increases the temperature of the implanted wafer so that, after the ion implantation process is finished, the wafer can be moved into the environment with no, or at least less, water condensation.

摘要翻译： 公开了用于低温离子注入的技术。 在将晶片冷却到比植入晶片的室外的环境温度低的温度下，通过使温度调节装置工作来冷却晶片来将离子束投射在冷却的晶片上来注入冷却晶片 同时。 因此，植入的晶片上的离子束产生的热量基本上被温度调节装置除去。 然后，在进行大部分植入处理之后，温度调节装置被关闭或关闭。 因此，在残留植入过程中，由植入晶片上的离子束产生的热量至少部分地增加了植入的晶片的温度，使得在离子注入工艺完成之后，晶片可以不用移动到环境中， 或至少少量的水冷凝。

公开(公告)号：US20090230329A1

公开(公告)日：2009-09-17

申请号：US12126335

申请日：2008-05-23

申请人： Cheng-Hui Shen

发明人： Cheng-Hui Shen

IPC分类号： H01J37/08

CPC分类号： H01J37/1474 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/15 ,  H01J2237/20214 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/265

摘要： An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. Therefore a plurality of interlaced and not overlapped ion implantation scan lines are formed on the surface of the substrate, so the method can enhance the uniformity of the dose of the ion implantation in the substrate.

摘要翻译： 提供离子注入方法。 离子注入之前的方法是将衬底旋转一定角度，并且以垂直于扫描方向的方向和衬底的平面上的隔行间距移动离子束的扫描路径。 因此，在衬底的表面上形成多个交错且不重叠的离子注入扫描线，因此该方法可以增强衬底中离子注入的剂量的均匀性。

公开(公告)号：US08810438B2

公开(公告)日：2014-08-19

申请号：US13161231

申请日：2011-06-15

申请人： Ching-Cheng Tsai ,  Cheng-Hui Shen

发明人： Ching-Cheng Tsai ,  Cheng-Hui Shen

IPC分类号： H03K17/94 ,  F21V33/00 ,  G09G3/36 ,  H01H9/00 ,  H01H9/18 ,  H01H13/83

CPC分类号： H01H9/18 ,  H01H13/83 ,  H01H2209/06 ,  H01H2209/082 ,  H01H2211/004 ,  H01H2219/044 ,  H01H2219/062

摘要： A membrane circuit board and a keyboard device having the same are provided in the invention. The membrane circuit board is defined with a plurality of key regions. Each of the key regions is with a pressing region and at least one light-pervious region thereon. The membrane circuit board comprising at least two light-pervious membranes stacked with each other, and at least one light-pervious adhesive layer sandwiched between the two light-pervious membranes and at least fully filled in the light-pervious region.

摘要翻译： 在本发明中提供了一种膜电路板和具有该膜电路板的键盘装置。 膜电路板由多个键区限定。 每个关键区域具有按压区域和其上的至少一个透光区域。 所述膜电路板包括彼此层叠的至少两个透光膜，以及夹在所述两个透光膜之间并且至少完全填充在所述透光性区域中的至少一个透光性粘合剂层。

公开(公告)号：US20130334022A1

公开(公告)日：2013-12-19

申请号：US13612202

申请日：2012-09-12

申请人： Cheng-Hui Shen

发明人： Cheng-Hui Shen

IPC分类号： H01H13/7065 ,  H01H13/14

CPC分类号： H01H3/125

摘要： A keyswitch, disposed on a base plate, includes a keycap and a scissors-like supporting structure. The scissors-like supporting structure is disposed on the base plate and supports the keycap. The scissors-like supporting structure includes a first supporting member and a second supporting member. The first supporting member includes a first engaging shaft and a second engaging shaft respectively engaged with the base plate and the keycap. The second supporting member is pivotally connected to the first supporting member and includes a third engaging shaft and a fourth engaging shaft respectively engaged with the base plate and the keycap. A line connected between the centers of gravity of the first and second engaging shaft is not perpendicular to the first and second engaging shaft. A line connected between the centers of gravity of the third and fourth engaging shaft is not perpendicular to the third and fourth engaging shaft.

摘要翻译： 设置在基板上的钥匙开关包括键帽和剪刀状支撑结构。 剪刀状支撑结构设置在基板上并支撑键帽。 剪刀状支撑结构包括第一支撑构件和第二支撑构件。 第一支撑构件包括分别与基板和键帽接合的第一接合轴和第二接合轴。 第二支撑构件枢转地连接到第一支撑构件，并且包括分别与基板和键帽接合的第三接合轴和第四接合轴。 连接在第一和第二接合轴的重心之间的线不垂直于第一和第二接合轴。 连接在第三和第四接合轴的重心之间的线不垂直于第三和第四接合轴。

公开(公告)号：US08581217B2

公开(公告)日：2013-11-12

申请号：US12900862

申请日：2010-10-08

申请人： Don Berrian ,  Cheng-Hui Shen

发明人： Don Berrian ,  Cheng-Hui Shen

IPC分类号： G21K5/10

CPC分类号： H01J37/3171 ,  H01J37/3045 ,  H01J2237/24521 ,  H01J2237/24542 ,  H01J2237/30433

摘要： A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.

摘要翻译： 一种能够监测离子注入的方法。 首先，提供离子束和工件。 接下来，通过离子束植入工件，并产生具有与离子束和工件之间的多个相对位置相关的许多信号的轮廓，其中轮廓具有至少较高部分，渐进部分和下部。 因此，通过直接分析轮廓而不参考预定轮廓，并且不使用测量离子束的轮廓仪，可以获得一些离子束信息，例如波束高度，波束宽度，离子束交叉上的离子束电流分布 切割等，并可实时监测离子注入。 此外，当依次植入许多工件时，一个或多个初始植入的工件的轮廓可以是产生用于校准下列工件的离子注入的参考。

公开(公告)号：US07687784B2

公开(公告)日：2010-03-30

申请号：US12126312

申请日：2008-05-23

申请人： Nai-Yuan Cheng ,  Yun-Ju Yang ,  Cheng-Hui Shen ,  Junhua Hong ,  Jiong Chen ,  Tienyu Sheng ,  Linuan Chen

发明人： Nai-Yuan Cheng ,  Yun-Ju Yang ,  Cheng-Hui Shen ,  Junhua Hong ,  Jiong Chen ,  Tienyu Sheng ,  Linuan Chen

IPC分类号： H01J7/24 ,  H01J27/02 ,  H01J49/10

CPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/08 ,  H01J2237/24585

摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

摘要翻译： 注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。 因此，浅离子注入的植入效率因此增加。