发明授权
- 专利标题： Thermal management substrate
- 专利标题（中）： 热管理基板
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申请号： US11051749申请日： 2005-02-03
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公开(公告)号： US07695564B1公开(公告)日： 2010-04-13
- 发明人: Miroslav Micovic , Peter Deelman , Yakov Royter
- 申请人： Miroslav Micovic , Peter Deelman , Yakov Royter
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理机构： Tope-McKay & Assoc.
- 主分类号： C30B25/02
- IPC分类号： C30B25/02
摘要：
The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film. The method comprises acts of fabricating a separation by implantation of oxygen (SIMOX) wafer; depositing a polycrystalline diamond film onto the SIMOX wafer; and removing various layers of the SIMOX wafer to leave a Si overlay layer that is epitaxially fused with the polycrystalline diamond film. In the case of the DLC film, the method comprises acts of ion-implanting a Si wafer; depositing an amorphous DLC film onto the Si wafer; and removing various layers of the Si wafer to leave a Si overlay structure epitaxially fused with the DLC film.
公开/授权文献
- US2622673A Venetian blind head bar organization 公开/授权日：1952-12-23
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